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Related publications (29)

Graphene-based Field-effect Transistors

Adarsh Singh Sagar

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

EPFL2011

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Sebastian Riester, Evgeny Mikheev

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

Andras Kis, Branimir Radisavljevic

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental ...

2011

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Libero Zuppiroli, Stéphane Suarez, Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the oxide dielectric; this interface is crucial for transistor performance. Self-assembled monolayers (SAMs) on the interfa ...

American Chemical Society2010

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...

EPFL2010

The Single-Electron Bipolar Avalanche Transistor

Marc Lany

We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...

EPFL2010

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Klaus Kern, Marko Burghard, Hagen Klauk, Ralf Thomas Weitz

The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and cir ...

American Chemical Society (ACS)2009

Bias stress effect in low-voltage organic thin-film transistors

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold ...

2009

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

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