Publications related to Density on a manifold

Critical Schrodinger Cat Qubit

Vincenzo Savona, Fabrizio Minganti, Luca Gravina

Encoding quantum information onto bosonic systems is a promising route to quantum error correc-tion. In a cat code, this encoding relies on the confinement of the dynamics of the system onto the two-dimensional manifold spanned by Schrodinger cats of oppos ...

AMER PHYSICAL SOC2023

Learning Pattern Transformation Manifolds for Classification

Pascal Frossard, Elif Vural

Manifold models provide low-dimensional representations that are useful for analyzing and classifying data in a transformation-invariant way. In this paper we study the problem of jointly building multiple pattern transformation manifolds from a collection ...

2012

On A Class Of Mean Field Solutions Of The Monge Problem For Perfect And Self-Interacting Systems

Philippe Choquard

The Monge problem (Monge 1781; Taton 1951), as reformulated by Kantorovich (2006a, 2006b) is that of the transportation at a minimum "cost" of a given mass distribution from an initial to a final position during a given time interval. It is an optimal tran ...

2010

Double-bracket dissipation in kinetic theory for particles with anisotropic interactions

Cesare Tronci

We derive equations of motion for the dynamics of anisotropic particles directly from the dissipative Vlasov kinetic equations, with the dissipation given by the double-bracket approach (double-bracket Vlasov, or DBV). The moments of the DBV equation lead ...

2010

Minimum distance between pattern transformation manifolds: Algorithm and Applications

Pascal Frossard, Effrosyni Kokiopoulou

Transformation invariance is an important property in pattern recognition, where different observations of the same object typically receive the same label. This paper focuses on a transformation invariant distance measure that represents the minimum dista ...

2009

Interface States and Trapping Effects in Al1O3- and ZrO2/InAlN/AlN/GaN Metal-Oxide-Semiconductor Heterostructures

Nicolas Grandjean, Jean-François Carlin

We investigate Al2O3- and ZrO2/InAlN/GaN metal-oxide-semiconductor heterostructures (MOS-H) using capacitance-time transients in the temperature range of 25-300 degrees C. A deep-level transient spectroscopy based analysis revealed the maximum interface st ...

2009