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Related publications (29)

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Mihai Adrian Ionescu, Junrui Zhang, Erick Antonio Garcia Cordero, Francesco Bellando

The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the channel region, at least one stack comprising at ...

2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo, Mohammad Samizadeh Nikooytabalvandani

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

Institute of Electrical and Electronics Engineers2019

Structural Rewriting in XOR-Majority Graphs

Giovanni De Micheli, Mathias Soeken, Zhufei Chu

In this paper, we present a structural rewriting method for a recently proposed XOR-Majority graph (XMG), which has exclusive-OR (XOR), majority-of-three (MAJ), and inverters as primitives. XMGs are an extension of Majority-Inverter Graphs (MIGs). Previous ...

ASSOC COMPUTING MACHINERY2019

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

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