Gain-Cell embedded DRAM (GC-eDRAM) has recently been recognized as a possible alternative to traditional SRAM. While GC-eDRAM inherently provides high-density, low-leakage, low-voltage, and 2-ported operation, its limited retention time requires periodic, ...
In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insu ...
Recent research advocates large die-stacked DRAM caches in manycore servers to break the memory latency and bandwidth wall. To realize their full potential, die-stacked DRAM caches necessitate low lookup latencies, high hit rates and the efficient use of o ...
Recent advances in process technology augment the systems-on-chip (SoCs) functionality per unit area with the substantial decrease of device features. However, features abatement triggers new reliability issues such as the single-event multi-bit upset (SMU ...
Gossip-based information dissemination protocols are considered easy to deploy, scalable and resilient to network dynamics. They are also considered highly flexible, namely tunable at will to increase their robustness and adapt to churn. So far however, the ...
