Publication

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

Mihai Adrian Ionescu, Arnab Biswas
2014
Journal Articles

Abstract

In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insulator (FD-SOI) devices. The Tunnel FET based DRAM cell has an asymmetric body and a partial overlap of the top gate (LG1) with a total overlap of the back gate over the channel region (LG2). A potential well is created by biasing the back gate (VG2) in accumulation while the front gate (VG1) is in inversion. Holes from the p+ source are injected by the forward-bias p+i junction and stored in the electrically induced potential well. Programming conditions and related transients are reported and the role of temperature is investigated.

Official source

https://infoscience.epfl.ch/entities/publication/b5b9ef5f-9ae5-48ec-a52b-582aae17cb78

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Mihai Adrian Ionescu, Arnab Biswas
2014
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b5b9ef5f-9ae5-48ec-a52b-582aae17cb78

About this result

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Static random-access memory

Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

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