Publication

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

Mihai Adrian Ionescu, Arnab Biswas
2014
Journal Articles

Résumé

In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insulator (FD-SOI) devices. The Tunnel FET based DRAM cell has an asymmetric body and a partial overlap of the top gate (LG1) with a total overlap of the back gate over the channel region (LG2). A potential well is created by biasing the back gate (VG2) in accumulation while the front gate (VG1) is in inversion. Holes from the p+ source are injected by the forward-bias p+i junction and stored in the electrically induced potential well. Programming conditions and related transients are reported and the role of temperature is investigated.

Source officielle

https://infoscience.epfl.ch/entities/publication/b5b9ef5f-9ae5-48ec-a52b-582aae17cb78

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Mihai Adrian Ionescu, Arnab Biswas
2014
Journal Articles

Résumé

Source officielle

https://infoscience.epfl.ch/entities/publication/b5b9ef5f-9ae5-48ec-a52b-582aae17cb78

À propos de ce résultat

Concepts associés (29)

Static Random Access Memory

thumb|Une SRAM de 1999. La mémoire vive statique (ou SRAM de l'anglais Static Random Access Memory) est un type de mémoire vive utilisant des bascules pour mémoriser les données. Mais contrairement à la mémoire dynamique, elle n'a pas besoin de rafraîchir périodiquement son contenu. Comme la mémoire dynamique, elle est volatile : elle ne peut se passer d'alimentation sous peine de voir les informations effacées irrémédiablement.

Transistor à effet de champ

Un transistor à effet de champ (en anglais, Field-effect transistor ou FET) est un dispositif semi-conducteur de la famille des transistors. Sa particularité est d'utiliser un champ électrique pour contrôler la forme et donc la conductivité d'un « canal » dans un matériau semiconducteur. Il concurrence le transistor bipolaire dans de nombreux domaines d'applications, tels que l'électronique numérique. Le premier brevet sur le transistor à effet de champ a été déposé en 1925 par Julius E. Lilienfeld.

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

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