MICRO-312: Physics of semiconductors devices

Lectures in this course (97)

Covers the behavior of p-n junctions at equilibrium, including voltage effects on Fermi energy and depletion regions.

Explains the analysis of ideal p-n junction diodes, focusing on current calculations and minority carrier behavior under different bias conditions.

Covers the behavior of real PN diodes, focusing on generation and recombination currents and their implications in various operational conditions.

Covers the principles and historical development of bipolar transistors, detailing their operation and significance in electronics.

Explains the operation of bipolar npn transistors using the Ebers-Moll model in active and reverse modes.

Discusses bipolar transistor configurations, focusing on common base and common emitter setups, their current gains, and the impact of Early voltage.

Provides an overview of bipolar junction transistors, focusing on their small signal model and applications in electronic circuits.

Describes the qualitative behavior of MOSFET transistors, focusing on their structure and operational principles.

Explains the operation of NMOS structures and their behavior in various regimes, including sub-threshold, linear, and saturation.

Provides an overview of MOSFET operation, focusing on NMOS and PMOS characteristics, including current equations and channel modulation effects.

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