MICRO-312: Physics of semiconductors devices

Lectures in this course (97)

Covers dispersion relations for particles, including their mathematical expressions and applications in particle physics and electron microscopy.

Covers the formation of energy bands in semiconductors and their electronic properties.

Covers the principles of optical absorption in gases and semiconductors, detailing energy interactions and measurement techniques.

Covers doping profiles in semiconductors, focusing on silicon bars doped with boron and phosphorus for applications like avalanche photodiodes.

Covers the impact of temperature on Fermi levels in doped semiconductors, analyzing behavior at 300 K, 600 K, and 77 K.

Covers the analysis of N+/N junctions in semiconductor components, focusing on diffusion and drift currents and their equilibrium.

Covers the hot plate experiment and the behavior of silicon semiconductors under temperature gradients.

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