Publications by Laurent Fabien Hubert Sansonnens

Laser-Scribing Patterning for the Production of Organometallic Halide Perovskite Solar Modules

Christophe Ballif, Laurent Fabien Hubert Sansonnens, Sylvain Nicolay, Jun Ho Yum, Soo-Jin Moon, Arnaud Walter, Mustapha Benkhaira, Julien Claude Bailat

Efficiencies of solar cells based on organometallic halide perovskite absorber material have dramatically increased over the past few years. Most of efficiencies reported so far have, however, been obtained on solar cells with very small lab-scale area of ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H-2 discharges

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Benjamin Strahm

In this work, the microstructure transition from amorphous to microcrystalline silicon is defined in terms of the silane concentration in the plasma as opposed to the silane concentration in the input gas flow. In situ Fourier transform infrared absorption ...

2007

Optimization of microcrystaline silicon deposition efficiency

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Benjamin Strahm

2007

Electromagnetic sources of nonuniformity in large area capacitive reactors

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling

Theory and experiment show that two electromagnetic modes are necessary and sufficient to determine the field nonuniformity within a parallel-plate rf capacitive plasma reactor. These two modes give rise to the standing wave effect and the telegraph effect ...

2007

Fast equilibration of silane/hydrogen plasmas in large area RF capacitive reactors monitored by optical emission spectroscopy

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Benjamin Strahm

The optimal plasma parameters for plasma processing, such as deposition of microcrystalline silicon from silane and hydrogen, are generally chosen in steady-state discharge conditions. However, this steady state must be reached in a short time after plasma ...

2007

Optimization of the microcrystalline silicon deposition efficiency

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Benjamin Strahm

Cost reduction constraints for microcrystalline silicon thin film photovoltaic solar cells require high deposition rates and high silane gas utilization efficiencies. If the requirements in deposition rate have sometimes been fulfilled, it is generally not ...

2007

Electromagnetic field nonuniformities in large area, high-frequency capacitive plasma reactors, including electrode asymmetry effects

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling

Electromagnetic wave propagation effects can give rise to important limitations for processing uniformity in large area, radio-frequency (rf) capacitive plasma reactors. The electromagnetic wavefield solution is derived for a capacitive, high-frequency, cy ...

2006

Application of the shaped electrode technique to a large area rectangular capacitively coupled plasma reactor to suppress standing wave nonuniformity

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Hannes Schmidt

The electromagnetic standing wave effect can become the main source of nonuniformity limiting the use of very high frequency in large area reactors exceeding 1 m(2) required for industrial applications. Recently, it has been proposed and shown experimental ...

2006

Fast growth of microcrystalline silicon solar cells on LP-CVD ZnO in industrial KAI PECVD reactors

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Benjamin Strahm, Cédric Bucher

2006

3D numerical simulation of plasma enhanced chemical vapour deposition (PPECVD) applied to large-area showerhead reactors

Laurent Fabien Hubert Sansonnens, Raffaello Sobbia

2005

High-rate large-area silicon deposition by VHF plasma

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Arvind Shah

2005

Application of the shaped electrode technique to a large area rectangular capacitively-coupled plasma reactor to suppress standing wave nonuniformity

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Hannes Schmidt

2005

Comment on "Ion energy uniformity in high-frequency capacitive discharges" [Appl. Phys. Lett. 86, 021501 (2005)]

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Hannes Schmidt

2005

Probe measurements of plasma potential nonuniformity due to edge asymmetry in large-area radio-frequency reactors: the telegraph effect

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Lukas Derendinger, Hannes Schmidt

In large-area radio-frequency (rf) capacitive reactors, the redistribution of rf current to maintain current continuity near asymmetric sidewalls causes a perturbation in rf plasma potential to propagate along the resistive plasma between capacitive sheath ...

2005

Measurements and consequences of nonuniform radio frequency plasma potential due to surface asymmetry in large area radio frequency capacitive reactors

Laurent Fabien Hubert Sansonnens, Christoph Hollenstein, Alan Howling, Lukas Derendinger, Benjamin Strahm

In large area reactors, a local asymmetry of the electrode area, due to lateral grounded walls, causes a perturbation in rf plasma potential, due to the redistribution of lateral rf current, which propagates along the resistive plasma between capacitive sh ...

2005

Uniformity study in large-area showerhead reactors

Laurent Fabien Hubert Sansonnens, Raffaello Sobbia

Large area plasma-enhanced chemical vapor deposition of thin films such as silicon nitride or amorphous silicon is widely used for thin film transistor fabrication in the flat panel display industry. A numerical three-dimensional model to calculate the dep ...

2005

Calculation of the electrode shape for suppression of the standing wave effect in large area rectangular capacitively coupled reactors

Laurent Fabien Hubert Sansonnens

The electromagnetic standing wave becomes one of the main sources of plasma nonuniformity in large area capacitively coupled rf reactors. In cylindrical reactors with a central rf connection or one-dimensional linear reactors with rf connections at both ex ...

2005

Déposition assistée par plasma radiofréquence dans un réacteur de grande surface : effets de la contamination particulaire et de la fréquence d'excitation

Laurent Fabien Hubert Sansonnens

EPFL1998