Skip to main content

Search

Show all results for

Home

Person

Benjamin Strahm

This person is no longer with EPFL

About
Privacy
Disclaimer

Copyright © 2026 EPFL, all rights reserved

Graph Chatbot

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications (19)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing

Christophe Ballif, Antoine Descoeudres, Nicolas Badel, Benjamin Strahm, Antonin Faes, Sylvain Nicolay, Quentin Thomas Jeangros, Gabriel Christmann, Stefaan De Wolf, Matthieu Despeisse, Loris Barraud, Jonas Geissbühler, Johannes Peter Seif, Andrea Tomasi, Bertrand Yves Paul Paviet-Salomon

This paper reports on the development of an innovative back-contacted crystalline silicon solar cell with passivating contacts featuring an interband tunnel junction at its electron-collecting contacts. In this novel architecture, named "tunnel-IBC", both ...

2018

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

Christophe Ballif, Antoine Descoeudres, Benjamin Strahm, Bénédicte Demaurex, Stefaan De Wolf, Loris Barraud, Jakub Holovsky, Johannes Peter Seif

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvem ...

2011

Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques

Christophe Ballif, Benjamin Strahm, Andrea Feltrin, Gaetano Parascandolo, Grégory Bugnon

Hydrogenated microcrystalline silicon (μc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow ...

Elsevier B.V Amsterdam2011