Publications by Christophe Lallement

Analytic modelling of passive microfluidic mixers

Christophe Lallement, Jean-Michel Sallese

This paper deals with a new analytical model for microfluidic passive mixers. Two common approaches already exist for such a purpose. On the one hand, the resolution of the advection-diffusion-reaction equation (ADRE) is the first one and the closest to ph ...

AMER INST MATHEMATICAL SCIENCES-AIMS2022

Compact Model for Continuous Microfluidic Mixer

Christophe Lallement, Jean-Michel Sallese

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

IEEE2020

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Matthias Bucher, Christian Enz, François Krummenacher, Christophe Lallement, Jean-Michel Sallese, Eric Vittoz, Wladyslaw Grabinski

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

Christophe Lallement, Jean-Michel Sallese

The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance a ...

2019

Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Christophe Lallement, Jean-Michel Sallese, Wladyslaw Grabinski

The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and ...

IEEE2018

Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

Christophe Lallement, Jean-Michel Sallese

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...

IEEE2016

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Christophe Lallement, Jean-Michel Sallese, Lucian Barbut, Farzan Jazaeri

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

Institute of Electrical and Electronics Engineers2013

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Christophe Lallement, Jean-Michel Sallese

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

2012

Physics-based compact model for ultra-scaled FinFETs

Christophe Lallement, Jean-Michel Sallese, Ashkhen Yesayan

A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), ...

2011

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Christophe Lallement, Jean-Michel Sallese

We derived an analytical model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) device, the principle of which has been recently demonstrated. Despite some similarities with classical junction-based DG MOSFETs, ...

2011

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Christophe Lallement, Jean-Michel Sallese

In this paper, we propose to derive an analytical model for the doped symmetric double-gate (DG) MOSFET that is valid in all regions of operation. We show that doping the silicon channel can be converted in an equivalent silicon thickness and threshold vol ...

2010

Explicit Compact Model for Ultranarrow Body FinFETs

Christophe Lallement, Jean-Michel Sallese

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down t ...

2009

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

François Krummenacher, Christophe Lallement, Jean-Michel Sallese

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

2008

Modeling and Simulation of Multi-Discipline Systems using Bond Graphs and VHDL-AMS

Alain Vachoux, Christophe Lallement

Bond graphs represent a convenient tool for physical system analysis. While it is one part of the job to establish a pertinent bond graph model, it is another important part of the job to take advantage of this bond graph. A simulation tool is involved and ...

2005