Publications by Julien Dorsaz | EPFL Graph Search

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Static and dynamic properties of multi-section InGaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Optical bistability in InGaN-based multisection laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Luca Alex Milo Sulmoni

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

AIP American Institute of Physics2011

Recombination coefficients of GaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Luca Alex Milo Sulmoni

We measure the charge carrier recombination coefficients of InGaN quantum wells by analyzing the dynamical properties of (Al,In)GaN laser diodes emitting in the violet spectral range. Relaxation oscillations and turn-on delays are fitted to a rate equation ...

2011

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Luca Alex Milo Sulmoni

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

2011

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

Broadband blue superluminescent light-emitting diodes based on GaN

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Mauro Mosca, Antonino Francesco Castiglia

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

Jean-François Carlin, Julien Dorsaz

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...

2007

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jean-François Carlin, Marcel Py, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca, Dobri Simeonov, Gabriel Christmann, Antonino Francesco Castiglia, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Gabriel Christmann

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

2005

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...

2005