Publications by Yogesh Singh Chauhan

Overexpression of human alpha-Synuclein leads to dysregulated microbiome/metabolites with ageing in a rat model of Parkinson disease

Yogesh Singh Chauhan, Hilal Lashuel, Florian Lang, Joan Romani Aumedes, Yogesh Singh

Background Braak's hypothesis states that sporadic Parkinson's disease (PD) follows a specific progression of pathology from the peripheral to the central nervous system, and this progression can be monitored by detecting the accumulation of alpha-Synuclei ...

BMC2023

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Jean-François Carlin, Rakesh Chawla, Richard Pitts, Arvind Shah, Ian Smith, Randoald Müller, Carlos Andres Peña Reyes, Jung Eung Park, Thomas Mountford, Matthias Finger, Jin Won Seo, Johannes Steen, Josef Andreas Schuler, Olivier Martin, Melody Swartz, Kyumin Lee, Hoang-Trang Lam, Maria Isabel Cordero Campana, Ananda Sankar Roy, Bertrand François, Yogesh Singh Chauhan, Xiaoqiang Wang, Miguel Fernández Ruiz, Sun Hee Kim, Jian Zhao, João Miguel das Neves Duarte, Justin Terence Notz Pekkanen, Joo Yeon Kim, Alexis Kalogeropoulos, Jae-Woo Choi, Pedro Camilo de Oliveira e Silva, Cristopher Ariel Zeballos Avila, Myun Sik Kim, Chao Wang, Yixing Chen, Aravind Kumar Chandiran, Tian Cheng, Ana Margarida Da Costa Ricardo, , , , , , , , , , , ,

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Sourabh Khandelwal, Maria-Anna Chalkiadaki

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology

Christian Enz, Yogesh Singh Chauhan, Anurag Mangla, Maria-Anna Chalkiadaki

IEEE2012

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Michel Declercq, Mihai Adrian Ionescu, Yogesh Singh Chauhan

A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...

2008

Compact Modeling of Suspended Gate FET

Michel Declercq, Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Nicolas Abelé, Dimitrios Tsamados

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

2008

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

Compact modeling of high voltage MOSFETs

Yogesh Singh Chauhan

In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...

EPFL2007

Noise Modeling in Lateral Asymmetric MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy, Yogesh Singh Chauhan

2006

Partitioning Schemes in the Lateral Asymmetric MOST

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

Yogesh Singh Chauhan

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Overexpression of human alpha-Synuclein leads to dysregulated microbiome/metabolites with ageing in a rat model of Parkinson disease

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Compact Modeling of Suspended Gate FET

Oscillator Based on Suspended Gate MOS Transistors

Compact modeling of high voltage MOSFETs

Noise Modeling in Lateral Asymmetric MOSFET

Partitioning Schemes in the Lateral Asymmetric MOST

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

A Highly Scalable High Voltage MOSFET Model

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

A Physical Analysis of High Voltage MOSFET Capacitance Behaviour