Publications by Eric Feltin | EPFL Graph Search

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Eric Feltin, Jean-Michel Jacques Lamy

This paper focuses on the dimensioning of a very bright full color 10 mu m-pitch light-emitting device (LED) microdisplay for avionics application. Starting from the specifications of head-mounted display to be used in an augmented reality optical system, ...

WILEY2020

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Biexcitonic molecules survive excitons at the Mott transition

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mehran Shahmohammadi, Georg Rossbach, Gwénolé Jean Jacopin

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser, Christian Mounir, Georg Rossbach

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Georg Rossbach

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

Amer Physical Soc2013

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

High-speed and low-noise AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic ...

Wiley2011

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Jean-François Carlin, Pierre Stadelmann, Jean-Luc Rouvière, Marco Cantoni, Nicolas Grandjean, Eric Feltin, Anas Mouti

Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

2011

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The evolution of the polariton condensation threshold (P-thr) under incoherent optical pumping is investigated both theoretically and experimentally over a wide range of temperatures (4-340 K) and exciton-cavity photon detunings (-120-0 meV) in a multiple ...

2010

Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin

By performing pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in a wurtzite GaN/AlGaN quantum well (QW)grown by metal organic vapor phase epitaxy. The circular degree of polarization of the differential reflectivity sign ...

2010

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS ...

2010

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser

The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit ...

2010

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

2010

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We report on ultrahigh-speed 80 nm AlInN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistivity silicon substrates. The devices feature a peak measured transconductance g(M) = 415 mS/mm, a maximum current of 1.43 A/mm with a ratio I ...

2010

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010