Publications by Dimitrios Tsamados

In-situ grown horizontal carbon nanotube membrane

Mihai Adrian Ionescu, Dimitrios Tsamados, Hoël Maxime Guérin

We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt angle on ...

Elsevier2012

Streched organic transistors maintain mobility on flexible substrates

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

Elsevier2012

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

Elsevier2012

Numerical analysis of zeptogram/Hz-level mass responsivity for in-plane resonant nano-electro-mechanical sensors

Mihai Adrian Ionescu, Dimitrios Tsamados

This paper presents numerical analysis of an in-plane resonant nano-electro-mechanical (NEM) sensor based on mass-detection principle using a 3D FEM electromechanical simulation combined with a NEM/MOS hybrid circuit simulation. The self-assembled linker m ...

2011

Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing

Mihai Adrian Ionescu, Dimitrios Tsamados, Hoël Maxime Guérin

We report here the fabrication of a sensitive and selective gas sensor using a carbon nanotube (CNT) membrane as the gas sensing transducer. A TiN/Al2O3/TiN stack is used as a support for the CNT growth catalyst, evaporated with a 45° tilt angle on the ver ...

2011

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

Elsevier2010

Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

2010

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Dimitrios Tsamados

This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning ra ...

IEEE2009

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed using res ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2009

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Jyotshna Bhandari, Andreea Veronica Savu, Nenad Cvetkovic

In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well controlled device p ...

IEEE2009

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Dimitrios Tsamados

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Compact Modeling of Suspended Gate FET

Michel Declercq, Mihai Adrian Ionescu, Christoph Eggimann, Yogesh Singh Chauhan, Nicolas Abelé, Dimitrios Tsamados

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Didier Bouvet, Mihai Adrian Ionescu, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

Maher Kayal, Mihai Adrian Ionescu, Cédric Meinen, Daniel Grogg, Hüseyin Cumhur Tekin, Dimitrios Tsamados

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconducto ...

2008

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Multi-gate vibrating-body field effect transistor (VB-FETs)

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Dimitrios Tsamados

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully dem ...

2008

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

In this paper we report on the effect of the environment on the SiO₂/pentacene interface. Two batches of bottom-contact pentacene thin-film transistors have been fabricated with a 100 nm thick SiO₂ as dielectric. Considerable shifts of the threshold voltag ...

IEEE2008

Nano-gap high quality factor thin film SOI MEM resonators

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

2008

MEMS tunable capacitors with fragmented electrodes and rotational electro-thermal drive

Mihai Adrian Ionescu, Alexander Mehdaoui, Dimitrios Tsamados

Springer, Springer-Verlag2007