Publications by Hassan Ghasemzadeh Mohammadi

A Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Hassan Ghasemzadeh Mohammadi, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

This paper deals with the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of fau ...

2016

Efficient Statistical Parameter Selection for Nonlinear Modeling of Process/Performance Variation

Giovanni De Micheli, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

With the growing number of process variation sources in deeply nano-scaled technologies, parameterized device and circuit modeling is becoming very important for chip design and verification. However, the high dimensionality of parameter space, for process ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Hassan Ghasemzadeh Mohammadi

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...

EPFL2016

From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires

Giovanni De Micheli, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

Controllable-Polarity Silicon Nanowire Transistors (CP-SiNWFETs) are among the promising candidates to complement or even replace the current CMOS technology in the near future. Polarity control is a desirable property that allows the on-line configuration ...

Institute of Electrical and Electronics Engineers2015

On the Design of a Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Eduardo Sanchez, Giovanni De Micheli, Hassan Ghasemzadeh Mohammadi, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

This paper first explores the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of ...

IEEE2015

Fast Process Variation Analysis in Nano-Scaled Technologies Using Column-Wise Sparse Parameter Selection

Giovanni De Micheli, Majid Yazdani, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

With growing concern about process variation in deeply nano-scaled technologies, parameterized device and circuit modeling is becoming very important for design and verification. However, the high dimensionality of parameter space is a serious modeling cha ...

2014

Vertically-Stacked Silicon Nanowire Transistors with Controllable Polarity: a Robustness Study

Giovanni De Micheli, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

Vertically-stacked Silicon NanoWire FETs (SiN- WFETs) with gate-all-around control are the natural and most advanced extension of FinFETs. At advanced technology nodes, due to Schottky contacts at channel interfaces, devices show an ambipolar behavior, i.e ...

2013

A Fast TCAD-based Methodology for Variation Analysis of Emerging Nano-Devices

Giovanni De Micheli, Majid Yazdani, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

Variability analysis of nanoscale transistors and circuits is emerging as a necessity at advanced technology nodes. Technology Computer Aided Design (TCAD) tools are powerful ways to get an accurate insight of Process Variations (PV). However ...

2013