Publications by Hagen Klauk | EPFL Graph Search

Controlling Single Molecule Conductance by a Locally Induced Chemical Reaction on Individual Thiophene Units

Klaus Kern, Uta Schlickum, Peter Wahl, Hagen Klauk, Ivan Pentegov, Verena Katharina Schendel

Among the prerequisites for the progress of single-molecule-based electronic devices are a better understanding of the electronic properties at the individual molecular level and the development of methods to tune the charge transport through molecular jun ...

Wiley-VCH Verlag GmbH2020

Remotely Controlled Isomer Selective Molecular Switching

Klaus Kern, Uta Schlickum, Peter Wahl, Hagen Klauk, Ivan Pentegov, Verena Katharina Schendel

Non local addressing-the "remote control"- of molecular switches promises more efficient processing for information technology, where fast speed of switching is essential. The surface state of the (111) facets of noble metals, a confined two-dimensional el ...

Amer Chemical Soc2016

Bipolar Conductance Switching of Single Anthradithiophene Molecules

Klaus Kern, Uta Schlickum, Peter Wahl, Hagen Klauk, Ivan Pentegov, Verena Katharina Schendel

Single molecular switches are basic device elements in organic electronics. The pentacene analogue anthradithiophene (ADT) shows a fully reversible binary switching between different adsorption conformations on a metallic surface accompanied by a charge tr ...

Amer Chemical Soc2015

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

Klaus Kern, Ralf Thomas Weitz, Hagen Klauk

A detailed understanding for the mechanisms that control degradation of the electrical performance of organic thin-film transistors (TFTs) during exposure to various environments, such as oxygen and humidity, is still developing. This is particularly true ...

Elsevier Science Bv2015

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin alumin ...

Amer Chemical Soc2014

High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing

Klaus Kern, Hagen Klauk

The small-molecule organic semiconductor 2,9-di-decyl-dinaphtho-[2,3-b: 2',3'-f]-thieno[3,2-b]-thiophene (C-10-DNTT) was used to fabricate bottom-gate, top-contact thin-film transistors (TFTs) in which the semiconductor layer was prepared either by vacuum ...

Elsevier Science Bv2013

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Klaus Kern, Hagen Klauk

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm(2)/Vs at low voltages were fabricated. Transistors with channel lengths of 1 mu m show a transconductance of 60 mS/ ...

Amer Inst Physics2013

Contact Resistance and Megahertz Operation of Aggressively Scaled Organic Transistors

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

2012

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Klaus Kern, Ralf Thomas Weitz, Frederik Sebastian Ante, Hagen Klauk

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer t ...

American Chemical Society (ACS)2011

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Klaus Kern, Hagen Klauk

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...

2010

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...

Royal Society of Chemistry2010

Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

Klaus Kern, Ralf Thomas Weitz, Frederik Sebastian Ante, Hagen Klauk

Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produ ...

2010

Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring osci ...

Wiley2010

Mixed Self-Assembled Monolayer Gate Dielectrics for Continuous Threshold Voltage Control in Organic Transistors and Circuits

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

Mixed alkyl/fluoroalkyl phosphonic acid self-assembled monolayers have been prepared as ultra-thin dielectrics in low-voltage organic thin-film transistors and complementary circuits. Mixed monolayers enable continuous threshold-voltage tuning simply by ad ...

Wiley2010

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Klaus Kern, Marko Burghard, Ralf Thomas Weitz, Hagen Klauk

The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and cir ...

American Chemical Society (ACS)2009

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

Klaus Kern, Marko Burghard, Ralf Thomas Weitz, Hagen Klauk

The relationships between organic semiconductor morphology and device stability of organic field-effect transistors (FETs) are very complex and not yet fully understood. Especially For obtaining high-performance, air-stable n-channel FETs, gaining a deep i ...

2009

Bias stress effect in low-voltage organic thin-film transistors

Klaus Kern, Ralf Thomas Weitz, Hagen Klauk

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold ...

2009

Carbon-Based Field-Effect Transistors for Nanoelectronics

Klaus Kern, Marko Burghard, Hagen Klauk

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their pi-conjugated system. For each of these materials, recent ...

Wiley2009

Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives

Klaus Kern, Marko Burghard, Ralf Thomas Weitz, Hagen Klauk

Five core-cyanated perylene carboxylic diimides end-functionalized with fluorine-containing linear and cyclic substituents have been synthesized and employed in the fabrication of air-stable n-channel organic thin-film field-effect transistors with carrier ...

2008