Publications by Dmitry Mikulik

Growth of nanowire arrays from micron-feature templates

Anna Fontcuberta i Morral, Gaëtan Bernard, Martin George Friedl, William Craig Carter, Dmitry Mikulik, Lea Ghisalberti, Wonjong Kim, Pablo Romero Gómez, Christian André Jürgensen

Here, we present a two-step annealing procedure to imprint nanofeatures on SiO2 starting from metallic microfeatures. The first annealing transforms the microfeatures into gold nanoparticles and the second imprints these nanoparticles into the SiO2 layer w ...

2019

Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

Anna Fontcuberta i Morral, Dmitry Mikulik, Pablo Romero Gómez, Ian Nachemson

Series resistance in solar cells limit their maximum conversion efficiency and thus should be minimized. Generally, such losses originate from deficiencies at the contact or absorber level. Quantifying them is the first step for tackling its reduction. In ...

IOP PUBLISHING LTD2019

Surface Defect Passivation of Silicon Micropillars

Anna Fontcuberta i Morral, Franz-Josef Haug, Riad Berrazouane, Josua Andreas Stückelberger, Dmitry Mikulik, Pablo Romero Gómez

2018

Plasmonic Photodetectors

Anna Fontcuberta i Morral, Jelena Vukajlovic Plestina, Nolan Lassaline, Dmitry Mikulik, Pablo Romero Gómez

2018

The investigation of in situ removal of Si substrates for freestanding GaN crystals by HVPE

Dmitry Mikulik

2018

Advances in the characterization of nanowire photovoltaic devices

Dmitry Mikulik

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

EPFL2018

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Dmitry Mikulik

We investigate the stress evolution of 400 mu m-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickn ...

Nature Research2017

Nearly perfect GaN crystal via pit-assisted growth by HVPE

Dmitry Mikulik

We demonstrated 5 mm-thick bulk gallium nitride (GaN) with nearly perfect crystal quality. To achieve this, intentional etch pit formation by in situ dry HCl etching and ex situ wet etching in H3PO4 solution was employed on freestanding GaN templates follo ...

Royal Soc Chemistry2017

Thick GaN growth via GaN nanodot formation by HVPE

Dmitry Mikulik

We demonstrate a 400 mu m-thick GaN layer on 4 inch (0001) Al2O3 substrates through GaN nanodot formation as a seed for stress relaxation layers, which were formed by an in situ special surface treatment using HVPE. The size and density of the GaN nanodots ...

Royal Soc Chemistry2017

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Maria Ricci, Esther Alarcon Llado, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, Natasa Vulic

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Elsevier Science Bv2017

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016