Publications by Francesco Piro

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Ashish Sharma, Francesco Piro

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Performance of the MALTA telescope

Edoardo Charbon, Francesco Piro, Abhishek Sharma

MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180 nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under ...

SPRINGER2023

Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Francesco Piro

Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...

EPFL2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Ashish Sharma, Francesco Piro

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology

Francesco Piro

The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R & D on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 x 32 binary ...

2023

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

Edoardo Charbon, Francesco Piro

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Ieee-Inst Electrical Electronics Engineers Inc2023

Timing performance of radiation hard MALTA monolithic pixel sensors

Francesco Piro

The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation ...

2023

Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system

Francesco Piro

The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a ...

2023

Digital pixel test structures implemented in a 65 nm CMOS process

Edoardo Charbon, Francesco Piro

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 ai ...

Elsevier2023

Future developments of radiation tolerant sensors based on the MALTA architecture

Francesco Piro

The planned MALTA3 DMAPS designed in the standard TowerJazz 180 nm imaging process will implement the numerous process modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1 x 1015 1 M ...

2023

Development of a large-area, light-weight module using the MALTA monolithic pixel detector

Edoardo Charbon, Ashish Sharma, Francesco Piro

The MALTA pixel chip is a 2 cm x 2 cm large monolithic pixel detector developed in the Tower 180 nm imaging process. The chip contains four CMOS transceiver blocks at its sides which allow chip-to-chip data transfer. The power pads are located mainly at th ...

ELSEVIER2022

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Francesco Piro

The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >1 ...

2022

A 1-mu W Radiation-Hard Front-End in a 0.18-mu m CMOS Process for the MALTA2 Monolithic Sensor

Edoardo Charbon, Francesco Piro

In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The senso ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro, Abhishek Sharma

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

Francesco Piro

The upgrade of the MALTA DMAPS designed in Tower 180 nm CMOS Imaging process will implement the numerous modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1x10(15) 1 MeVn(eq)/cm(2). ...

ELSEVIER2022