Publication

Dispiro-oxepine/thiapine derivatives for optoelectronic semiconductors

Mohammad Khaja Nazeeruddin, Kasparas Rakstys, Sanghyun Paek, Muhammad Sohail
2018
Patents

Abstract

The dispiro-oxepine/dispiro-thiapine derivatives for optoelectronic semiconductors is a compound based on a structure having a functionalized dispiro compound of formula (Ia) or (Ib) with the core unit being a seven-membered heterocycle oxepine or thiapine, the derivative being formed by combining (Ia) or (Ib): with two moities selected from K1 and K2: The derivative is used as a hole transporting material in an optoelectronic and/or photoelectrochemical device.

Official source

https://infoscience.epfl.ch/entities/publication/12fceeb0-a928-419e-9c86-99d7928f7b25

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Mohammad Khaja Nazeeruddin, Kasparas Rakstys, Sanghyun Paek, Muhammad Sohail
2018
Patents

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/12fceeb0-a928-419e-9c86-99d7928f7b25

About this result

Related concepts (14)

Optoelectronics

Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, light often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Electron mobility

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .

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Dispiro-​oxepine​/thiapine derivatives for optoelectronic semiconductors

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

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Dispiro-oxepine/thiapine derivatives for optoelectronic semiconductors