Publication

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Mihai Adrian Ionescu, Jyotshna Bhandari
2008
Journal Articles

Abstract

We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature range of 850-1050 °C. We have observed that sheet resistance (Rsh) obtained in SGOI for p-type is approximately independent of annealing conditions. In addition, these values are lower than the SOI (20 nm) reference. Result reveals that almost all BF2 atoms remain in SGOI substrate giving rise to low Rsh, whereas dopant out diffuses and segregates in SOI. In contrast, Rsh measured with arsenic and phosphorus implanted SGOI samples is higher than SOI.

Official source

https://infoscience.epfl.ch/entities/publication/1bfe8e17-4cb5-4ba7-ba2d-12f75ab88da0

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Mihai Adrian Ionescu, Jyotshna Bhandari
2008
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/1bfe8e17-4cb5-4ba7-ba2d-12f75ab88da0

About this result

Related concepts (23)

Silicon–germanium

SiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Germanium

Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements.

Related publications (31)

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Gibbs sampling the posterior of neural networks

Giovanni Piccioli, Lenka Zdeborová, Emanuele Troiani

In this paper, we study sampling from a posterior derived from a neural network. We propose a new probabilistic model consisting of adding noise at every pre- and post-activation in the network, arguing that the resulting posterior can be sampled using an ...

Iop Publishing Ltd2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Kai Huang, Chen Yang, Mikhail Churaev, Xinru Ji, Yang Chen, Zihan Li, Alisa Davydova, Xi Wang, Junyin Zhang

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024