Publication

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin
2014
Conference Papers

Abstract

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and photo current is discussed. Four main phenomena are observed under illumination: (1) negative transconductance can be obtained under reverse bias conditions (2) the off current is governed by the photocurrent and subthreshold slope is degraded (3) a kink in the saturation current appears in the output characteristics (4) the light sensitivity of the transconductance in P mode operation can be tuned with the back gate bias.

Official source

https://infoscience.epfl.ch/entities/publication/2d1778e5-cdb2-4482-97ad-a9638b4fca76

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Mihai Adrian Ionescu, Nilay Dagtekin
2014
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/2d1778e5-cdb2-4482-97ad-a9638b4fca76

About this result

Related concepts (28)

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

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