Publication

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin
2014
Conference Papers

Résumé

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and photo current is discussed. Four main phenomena are observed under illumination: (1) negative transconductance can be obtained under reverse bias conditions (2) the off current is governed by the photocurrent and subthreshold slope is degraded (3) a kink in the saturation current appears in the output characteristics (4) the light sensitivity of the transconductance in P mode operation can be tuned with the back gate bias.

Source officielle

https://infoscience.epfl.ch/entities/publication/2d1778e5-cdb2-4482-97ad-a9638b4fca76

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Mihai Adrian Ionescu, Nilay Dagtekin
2014
Conference Papers

Résumé

Source officielle

https://infoscience.epfl.ch/entities/publication/2d1778e5-cdb2-4482-97ad-a9638b4fca76

À propos de ce résultat

Concepts associés (28)

Transistor à effet de champ à grille métal-oxyde

thumb|right|235px|Photographie représentant deux MOSFET et une allumette Un transistor à effet de champ à grille isolée plus couramment nommé MOSFET (acronyme anglais de metal-oxide-semiconductor field-effect transistor — qui se traduit par transistor à effet de champ à structure métal-oxyde-semiconducteur), est un type de transistor à effet de champ. Comme tous les transistors, le MOSFET module le courant qui le traverse à l'aide d'un signal appliqué sur son électrode nommée grille.

Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

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