Publication

Modeling of gain and phase dynamics in quantum dot amplifiers

Benoît Marie Joseph Deveaud, Marco Rossetti, Pablo Moreno
2008
Conference Papers

Abstract

By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a first ultrafast recovery of the gain, followed by electron relaxation and, in the nanosecond timescale, radiative and non-radiative recombinations. The phase dynamics is slower and is affected by thermal redistribution of carriers within the dot. We explain the ultrafast response of quantum dot amplifiers as an effect of hole escape and recombination without the need to assume Auger processes.

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https://infoscience.epfl.ch/entities/publication/5103e3bd-f0e1-4b61-bbb3-8b0f583f889c

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Benoît Marie Joseph Deveaud, Marco Rossetti, Pablo Moreno
2008
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5103e3bd-f0e1-4b61-bbb3-8b0f583f889c

About this result

Related concepts (29)

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

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