Publications related to RF Compact Modeling of High-voltage MOSFETs

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions

Gabriel Aeppli

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. ...

NATURE PUBLISHING GROUP2020

Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Samuel Rosset, Herbert Shea, Alexandre Poulin, Nadine Besse, Danick Briand, Alexis Pierre Henri Marette

Flexible high-voltage thin- lm transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a exible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implemen ...

Wiley-Blackwell2017

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

Christophe Lallement, Jean-Michel Sallese

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...

IEEE2016

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Sourabh Khandelwal, Maria-Anna Chalkiadaki

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

Modeling nanoscale quasi-ballistic MOS transistors : a circuit design perspective

Anurag Mangla

The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the des ...

EPFL2014

A 2.4-GHz low power polar transmitter for wireless body area network applications

Christian Enz, Vladimir Kopta, Franz Xaver Pengg

A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...

Springer Verlag2014

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus ...

Elsevier2013

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

Yusuf Leblebici, Seyed Armin Tajalli

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power (ULP) biomedical systems. Ranging in value from few hundreds ...

Springer Verlag2012

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Towards circuit design using VeSFETs

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Lucian Barbut

This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process var ...

2011

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Klaus Kern, Frederik Sebastian Ante, Hagen Klauk

An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...

Royal Society of Chemistry2010

Power-Performance Scalable Integrated Circuit Design Using Subthreshold MOS

Seyed Armin Tajalli

The potentials of subthreshold metal-oxide-semiconductor (MOS) solid-state devices for implementing widely adjustable performance integrated circuits with very low power consumption have been investigated. The main concentration of this work is developing ...

EPFL2010

New approach for SOI pixel sensor : analysis and implementation

Louis Harik

Silicon on Insulator (SOI) is an interesting alternative to bulk silicon for the fabrication of integrated circuits due to its advantages with respect to the junction leakage, low switching noise coupling, high temperature immunity, low voltage and low pow ...

EPFL2009