Publication

Fabrication and Characterization of Vertically Stacked Gate-All-Around Si Nanowire FET Arrays

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa
2009
Conference Papers

Abstract

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer scale lithography and conventional fabrication techniques. It is shown that demonstrator Schottky Barrier (SB) devices fabricated with Cr/NiCr contacts present good subthreshold slope (70mV/dec), ION/IOFF ratio $>= 10^4$ and reproducible ambipolar behavior.

Official source

https://infoscience.epfl.ch/entities/publication/8ac2235f-76ed-4544-876a-74ee04e986bd

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Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa
2009
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/8ac2235f-76ed-4544-876a-74ee04e986bd

About this result

Related concepts (31)

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

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