Atomic layer depositionAtomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors.
GalinstanGalinstan (R) is a brand name for an alloy composed of gallium, indium, and tin which melts at and is thus liquid at room temperature. However, it is not a eutectic alloy but a near eutectic alloy. In scientific literature, galinstan is also used as an acronym denoting the eutectic composition of the alloy of Ga-In-Sn, which melts at around . The composition of both alloys is roughly the same, albeit the Galinstan (R), a company's commercial technical product, likely has added flux to improve flowability, to reduce melting temperature, and to reduce surface tension.
