Publication

Domain-Wall Induced Large Magnetoresistance Effects at Zero Applied Field in Ballistic Nanocontacts

Arndt Christian von Bieren
2013
Journal Articles

Abstract

We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect. DOI: 10.1103/PhysRevLett.110.067203

Official source

https://infoscience.epfl.ch/entities/publication/eddef574-bbf8-4ea5-be76-bbf4f53630a3

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Arndt Christian von Bieren
2013
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/eddef574-bbf8-4ea5-be76-bbf4f53630a3

About this result

Related concepts (21)

Tunnel magnetoresistance

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology.

Magnetic domain

A magnetic domain is a region within a magnetic material in which the magnetization is in a uniform direction. This means that the individual magnetic moments of the atoms are aligned with one another and they point in the same direction. When cooled below a temperature called the Curie temperature, the magnetization of a piece of ferromagnetic material spontaneously divides into many small regions called magnetic domains. The magnetization within each domain points in a uniform direction, but the magnetization of different domains may point in different directions.

Domain wall (magnetism)

A domain wall is a term used in physics which can have similar meanings in magnetism, optics, or string theory. These phenomena can all be generically described as topological solitons which occur whenever a discrete symmetry is spontaneously broken. In magnetism, a domain wall is an interface separating magnetic domains. It is a transition between different magnetic moments and usually undergoes an angular displacement of 90° or 180°. A domain wall is a gradual reorientation of individual moments across a finite distance.

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