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Related publications (31)

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Frequency-scalable fabrication process flow for lithium niobate based Lamb wave resonators

Luis Guillermo Villanueva Torrijo, Muhammad Faizan

In this paper, we demonstrate the fabrication and characterization of lithium niobate (LN) based Lamb wave mode (S0 and SH0) resonators that address the stringent requirements of RF filtering for modern communication systems. The devices consist of a 400 n ...

IOP PUBLISHING LTD2020

Toward ultra-low power design methodology for frequency generation in the IoT design space

Mathieu Yves Hervé Coustans

Today, the semiconductor industry is feeding our digital world with more and more data coming from compact embedded electronics that are monitoring our environment and feeding analytics for action. Interaction with our digital world is mostly achieved thro ...

EPFL2019

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Zhendong Guo

We conduct a detailed investigation of defects in two representative amorphous oxides: amorphous Al2O3 (am-Al2O3) and TiO2 (am-TiO2), by combining ab initio molecular dynamics (MD) simulations and hybrid functional calculations. Our results indicate that o ...

EPFL2019

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jean-Michel Sallese, Farzan Jazaeri, Seyed Armin Tajalli, Arnout Lodewijk M Beckers

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Modeling and Design Optimization of Medium Frequency Transformers for Medium-Voltage High-Power Converters

Marko Mogorovic

Novel high-power medium-voltage converter technologies offering galvanic insulation are needed to support the development of the emerging medium-voltage direct-current grids and further improve the performance of various other applications such as traction ...

EPFL2019

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this paper, a high step-up magnetic-less DC/DC nX converter is designed and experimentally evaluated. GaN transistors are applied in a nX converter topology, yielding ultrahigh power density and high conversion efficiency. The absence of magnetic materi ...

IEEE2019

IGCT Low-Current Switching – TCAD and Experimental Characterization

Drazen Dujic, Dragan Stamenkovic

Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequ ...

2019

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

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