Publications associées à Flyback diode

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Method for operating a power converter and power converter

Drazen Dujic, Jakub Kucka

The present invention relates to a method for operating a resonant power converter (1) having a primary stage (2) and a secondary stage (3) at least one of which is actively operated and includes a half-bridge or full-bridge inverter (21) having a pull-up ...

2023

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

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The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

2023

Ultra-high voltage, low power and energy recovering electronics for dielectric elastomer actuators

Raphaël Johannes Charles Mottet

Heart failure is a cardiovascular disease affecting between 1 and 2% of the population of developed countries alone - more than 10 million people - with this number bound to increase due to the ageing of the population. This condition starts to develop its ...

EPFL2022

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

An Analytical Model for the Prediction of the Maximum Output Voltage Reachable with an Ultra-high Voltage Flyback Converter Driving Capacitive Actuators

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet

The DC-DC flyback converter is one of the most suitable topologies to generate the voltages necessary to operate Dielectric Elastomer Actuators. Voltages which can range from 5 to 20 kV. Previous works demonstrated through experiments the flyback’s ability ...

IEEE2021

Schmitt trigger-based control strategy for the discharge phase of an ultra-high-voltage bidirectional flyback

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet

The control strategy to discharge a capacitive load such as a dielectric elastomer actuator charged to several kilo-volts is critical to obtain a safe and reliable actuation. In the case of this publication, an ultra-high voltage bidirectional flyback conv ...

IEEE2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Critical Parasitic Elements of Coupled Inductors for Ultra-High Voltage Flyback Converters Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Morgan Almanza, Raphaël Johannes Charles Mottet

This paper presents the critical parasitic elements of coupled inductors and their influence when designing a low input (12V) and ultra-high output voltage (>4000V) DC-DC Flyback Converter. The aim is to design a compact converter capable to supply the ult ...

IEEE2019

Experiments and modelling for glow discharge plasmas applied to niobium sputter deposition in superconducting radiofrequency cavities

Thibaut François Hugo Richard

Thin film coatings are ubiquitous in modern daily lives, from the semi-conductor industry to aesthetic applications, and rely on the modification of a given material to enhance its surface properties. At CERN (European Organization for Nuclear Research), t ...

EPFL2019

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Metal Halide Perovskites as Mixed Electronic-Ionic Conductors: Challenges and Opportunities-From Hysteresis to Memristivity

Wolfgang Richard Tress

Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hys ...

Amer Chemical Soc2017

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

László Forró, Endre Horvath, Bálint Náfrádi, Andrea Pisoni, Massimo Spina, Karoly Holczer

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a dio ...

2017

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014