Publications associées à PZT

How to Make Elastomers Piezoelectric?

Piezoelectrics play a significant role in modern electronics and electric devices. Thermal or mechanical stress on such materials induces a change in polarization generating an electric response, which is the sole effect of why they are so interesting. How ...

Wiley2023

Ultrahigh Electrostrictive Effect in Lead-Free Ferroelectric Ceramics Via Texture Engineering

Dragan Damjanovic, Li Jin, Yuan Sun

The electrostrictive effect, which induces strain in ferroelectric ceramics, offers distinct advantages over its piezoelectric counterpart for high-precision actuator applications, including anhysteretic behavior even at high frequencies, rapid reaction ti ...

Amer Chemical Soc2023

Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

Jacqueline Geler Kremer

Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023

Programmable Silicon Nitride Photonic Integrated Circuits

Tobias Kippenberg, Rui Ning Wang, Anat Siddharth, Viacheslav Snigirev, Andrea Bancora, Andrey Voloshin, Vladimir Shadymov

Silicon Nitride (Si3N4) photonic integrated circuits (PICs) have emerged as core technology in a variety of applications ranging from LIDAR to quantum control and computing. However, the need for high-speed, low-voltage tuning and modulation has been a lon ...

IEEE2023

Printed degradable piezoelectric microsystems: From ink formulation to device fabrication and characterization

Morgan Mc Kay Monroe

As the world moves further and further into the semiconductor era, the amount of waste generated from electronics ("e-waste") is increasing rapidly and unsustainably. Of particular note, alternatives to lead-based piezoelectric materials must be establishe ...

EPFL2023

Induced giant piezoelectricity in centrosymmetric oxides

Paul Muralt, Dragan Damjanovic, Mahmoud Hadad, Vasiliki Tileli, Lukas Riemer, Daesung Park

Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric materials must have a noncentrosymmetric crystal structure. For more than a century, this has remained a major obstacle ...

American Association for the Advancement of Science2022

Nonlinear electro-mechanical coupling and thermally stimulated currents in relaxor ferroelectrics

Lukas Riemer

In this work, the emergence of polarization and electro-mechanical coupling in Pb(Mg1/3Nb2/3)O3 and Pb(Mg1/3Nb2/3)O3 â PbTiO3 was investigated by means of thermally stimulated current, and nonlinear dielectric and electro-mechanical measurements. The pre ...

EPFL2022

Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators

Luis Guillermo Villanueva Torrijo, Silvan Stettler

Thin-film lithium niobate (LNO) has been identified as a promising material platform for enabling high electromechanical coupling and low-loss piezoelectric resonators for filtering applications. In this work, the design and fabrication of fundamental shea ...

IEEE2022

Defect-induced magnetism in homoepitaxial SrTiO3

Mihai Adrian Ionescu, Daesung Park

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

AIP Publishing2022

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Véronique Michaud, Yves Leterrier, Dragan Damjanovic, Sara Dalle Vacche

Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...

2020

Influence of humidity, temperature and prestretch on the dielectric breakdown strength of silicone elastomer membranes for DEAs

Herbert Shea, Fabio Beco Albuquerque

Humidity, temperature and membrane prestretch influence the dielectric breakdown strength of elastomer membranes. These three factors thus also influence the maximum force and strain that dielectric elastomer actuators (DEAs) can generate, as the Maxwell p ...

IOP PUBLISHING LTD2020

TiO2- based ceramics, from basic science to applications

Nanomaterials and nanoparticles are nowadays used in a wide range of applications; from sunscreens, paint and food industry to catalytic processes, lighting, TV's and displays, their presence is percolating in our daily life. New applications rise every da ...

EPFL2020

Thermal coarsening of individual titanate nanowires and their assemblies: Surface vs. bulk diffusion

László Forró, Luca Rossi, Endre Horvath, Sergiy Katrych, Massimo Spina, Laurent Syavoch Bernard, Xavier Berdat

The thermal coarsening of titanate nanowires was investigated from room temperature to 1000 degrees C by AFM, SEM, XRD and Raman spectroscopy. Phase transformation kinetics and the external morphology were studied in two configurations: i) as individual an ...

2020

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Victor Carle Adrien Boureau

Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has bee ...

2020

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019

Al0.83Sc0.17N Contour-Mode Resonators With Electromechanical Coupling in Excess of 4.5%

Paul Muralt, Luis Guillermo Villanueva Torrijo, Andrea Lozzi

In this paper, we demonstrate the fabrication of contour-mode resonators (CMRs) with Al0.83Sc0.17N as a piezoelectric layer. Moreover, we assess the electromechanical coupling and the maximum achieved quality factor from 150 to 500 MHz. In comparison to pu ...

2019

Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling

Paul Muralt, Thomas La Grange, Silviu Cosmin Sandu, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Kaoru Yamashita

Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

WILEY2019

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices

Mohammad Fazel Parsapour Kolour

Mobile communication has grown explosively in recent years, leading to a strong demand for cheap, but high-performing bandpass filters with low insertion loss and smaller size. Surface acoustic wave (SAW) and thin film bulk acoustic wave (BAW) resonators r ...

EPFL2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019