Publications associées à Liaison pendante

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Iop Publishing Ltd2024

Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

Du Wen, Na Li

This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic pola ...

Pergamon-Elsevier Science Ltd2024

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Defect Passivation via the Incorporation of Tetrapropylammonium Cation Leading to Stability Enhancement in Lead Halide Perovskite

Anurag Krishna

Improving the performances of photovoltaic (PV) devices by suppressing nonradiative energy losses through surface defect passivation and enhancing the stability to the level of standard PV represents one critical challenge for perovskite solar cells. Here, ...

WILEY-V C H VERLAG GMBH2020

Balancing Density Functional Theory Interaction Energies in Charged Dimers Precursors to Organic Semiconductors

Anne-Clémence Corminboeuf, Alberto Fabrizio, Riccardo Petraglia

The pursuit of an increasingly accurate description of intermolecular interactions within the framework of Kohn-Sham density functional theory (KS-DFT) has motivated the construction of numerous benchmark databases over the past two decades. By far, the la ...

AMER CHEMICAL SOC2020

Gradient band structure: high performance perovskite solar cells using poly(bisphenol A anhydride-co-1,3-phenylenediamine)

Mohammad Khaja Nazeeruddin, Sanghyun Paek, Cristina Roldán Carmona, Hiroyuki Kanda, Aron Joel Huckaba, Albertus Adrian Sutanto, Hobeom Kim, Nadja Isabelle Desiree Klipfel, Ryuji Kaneko, Mousa Abdulla M E Abuhelaiqa, Maria Cristina Momblona Rincón

Surface passivation is a critical factor for improving the photovoltaic performance of perovskite solar cells. However, more robust principle investigations are required to build effective passivation strategies enabling high-performance perovskite solar c ...

Royal Society of Chemistry2020

Correlated states in twisted double bilayer graphene

Oleg Yazyev, Quansheng Wu, Cheng Shen, Na Li, Jian Tang, Rong Yang

Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle(1-7). For bilayer graphene where the two layers are twisted by the 'magic a ...

NATURE PUBLISHING GROUP2020

Miniaturized mr device comprising a cell culture micro-chamber and method for manufacturing such a device

Jürgen Brugger, Giovanni Boero, Marco Grisi, Gaurasundar Marc Conley

MR device (100) comprising a miniaturized magnetic resonance system (101) and a cell culture chamber (502) for the analysis of biological samples of less than about 1000 µm in size, wherein said device (100) is at least partially covered by a passivation-b ...

2020

Optoelectronic and magnetic properties induced by atomic defects in two-dimensional semiconductors

Alessio Scavuzzo

Two-dimensional (2D) materials have attracted increasing attention over the last decade owing to their remarkable mechanical, electrical and optical properties. Following the groundbreaking discovery of graphene, a plethora of other atomically-thin materia ...

EPFL2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

Application of a Tetra-TPD-Type Hole-Transporting Material Fused by a Troger's Base Core in Perovskite Solar Cells

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Zhaofu Fei, Cristina Roldán Carmona, Rui Xia, Maria Cristina Momblona Rincón

One of the obstacles to the commercialization of perovskite solar cells (PSCs) is the high price and morphological instability of the most common hole-transporting material (HTM) Spiro-OMeTAD. Herein, a novel HTM, termed V1160, based on four N,N '-bis(3-me ...

WILEY-V C H VERLAG GMBH2019

Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation

Xiao Zhou, Cheng Chen, Pengfei Ou

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its application in field-effect transistors. However, strong Fermi level pinning (FLP) has been observed for contacts betwee ...

2019

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Multiarm and Substituent Effects on Charge Transport of Organic Hole Transport Materials

Mohammad Khaja Nazeeruddin, Kevin Sivula, Liang Yao, Antonio Prlj, Kun-Han Lin, Nikita Drigo, Han-Hee Cho

We explore several potential dopant-free triphenylamine-based hole transport materials for perovskite solar cells by combining two design strategies: (1) incorporation of multiple arms for mobility enhancement and (2) including Lewis bases that assist in d ...

2019

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Alfredo Pasquarello, Assil Bouzid

We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...

American Physical Society (APS)2017

Evaluating Charge Carrier Transport and Surface States in CuFeO

Kevin Sivula, Florian Le Formal, Nestor Guijarro Carratala, Xavier Adrian Jeanbourquin, Mathieu Steven Prévot, Wiktor Stefan Bourée

Interest in delafossite (CuFeO2) as a candidate p-type photocathode for photoelectrochemical (PEC) solar fuel production has recently been increasing, mainly due to its excellent stability in aqueous environments and favorable light absorption properties. ...

American Chemical Society2017

Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

Christophe Ballif, Franz-Josef Haug, Antoine Descoeudres, Jacques Levrat, Matthieu Despeisse, Stefaan De Wolf, Eiji Kobayashi

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells incre ...

Elsevier Science Bv2017

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Sandip De

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, seconda ...

A V S Amer Inst Physics2017