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Publications associées (31)

Difference frequency generation in optically poled silicon nitride waveguides

Camille Sophie Brès, Ozan Yakar, Boris Zabelich, Edgars Nitiss, Ezgi Sahin

All-optical poling leads to an effective second-order nonlinearity (chi((2))) in centrosymmetric materials without the need for sophisticated fabrication techniques or material processing, through the periodic self-organization of the charges. The absence ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

Klaus Kern, Markus Ternes, Abhishek Grewal

Combined scanning tunnelling and atomic force microscopy using a qPlus sensor enables the measurement of electronic and mechanic properties of two-dimensional materials at the nanoscale. In this work, we study hexagonal boron nitride (h-BN), an atomically ...

BEILSTEIN-INSTITUT2021

APT/TEM characterization of the element segregation in ferritic/martensitic steels after irradiation in SINQ

Lijuan Cui

Ferritic /martensitic (FM) steels are among the most important materials in various nuclear applications. As radiation-induced segregation (RIS) is one of the major factors for embrittlement of nuclear materials, thereofre it is essential to study the RIS ...

EPFL2021

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Luca Nela, Palliyage Srilak Nirmana Perera, Catherine Erine

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

2021

Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Aleksandra Radenovic, Martina Lihter, Evgenii Glushkov, Andrey Chernev, Vytautas Navikas, Reza Zamani, Jean Camille Benjamin Comtet

Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently ...

AMER CHEMICAL SOC2021

C-H Bond Activation by an Isolated Dinuclear U(III)/U(IV) Nitride

Rosario Scopelliti, Marinella Mazzanti, Ivica Zivkovic

Synthetic studies of bimetallic uranium nitride complexes with the N(SiMe3)(2) ligand have generated a new nitride complex of U(III), which is highly reactive toward C-H bonds and H-2. Treatment of the previously reported U(IV)/U(IV) nitride complex [Na(DM ...

2020

Observation of Stimulated Brillouin Scattering in Silicon Nitride Integrated Waveguides

Luc Thévenaz, Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Arslan Sajid Raja, Jijun He, Flavien Gyger

Silicon nitride (Si3N4) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore, understanding all nonlinear optical properties of S ...

2020

Wafer-level fabrication of individual solid-state nanopores for sensing single DNAs

Miao Zhang

For biomolecule sensing purposes a solid-state nanopore platform based on silicon has certain advantages as compared to nanopores on other substrates such as graphene, silicon nitride, silicon oxide etc Capitalizing on the developed CMOS technology, nanopo ...

2020

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

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