Thomas RizzoEDUCATION
Ph.D., Chemistry, University of Wisconsin, Madison, 1983
B.S., Chemistry, cum laude, Rensselaer Polytechnic Institute, 1978
ACADEMIC AND ADMINISTRATIVE POSITIONS
Dean, Faculty of Basic Sciences, EPFL, 2004-present
Head, Department of Chemistry, EPFL, 1997-2004
Professor of Chemistry, EPFL, 1994-present
Professor of Chemistry, University of Rochester, 1993-1994
Assistant Professor of Chemistry, University of Rochester, 1986-1992
Research Associate, The James Franck Institute, University of Chicago, 1984-1986
Marc IlegemsMarc Ilegems obtained degrees in Electrical Engineering from the University of Brussels in 1965 and a doctorate in Electrical Engineering from Stanford University in 1970. From 1969 to 1977 he was a Member of Technical Staff at the Solid State Electronics Research Laboratory, Bell Laboratories, Murray Hill. He joined the Ecole Polytechnique Federale (Swiss Federal Institute of Technology) in Lausanne in October 1977 as Professor and Director of the new Interdepartmental Institute of Microelectronics (1977-1983) and subsequently as Director of the Institute of Micro- and Optoelectronics (1983-2000) and of the Semiconductor Device Physics Laboratory (1983-2005).
Prof. Ilegems served as Dean of the Department of Physics from 1998 to 2000, and as Director of the Swiss National Centre of Competence in Research (NCCR) in Quantum Photonics (2001-2005), the Swiss Priority Program OPTICS (1993-1999) and the Swiss National Program on Micro- and Optoelectronics (1983-90). He is a member of the Scientific Council and has acted as expert and consultant for several national and European research organizations.
His current activities include technical and patent consulting for private organizations, contributions to the definition and management of research programs in the framework of bilateral collaborations between Poland, Hungary and Switzerland (2011-2017), and participation as member of various ICT and FET review panels within the Horizon 2020 programme.
Prof. Ilegems received an honorary doctorate from the University of Toulouse (1998) and the Heinrich Welker Award from the Compound Semiconductor Symposium (2006) for his contributions to III-V semiconductor materials and device research.
The research activities of the Semiconductor Device Physics Laboratory centred on the physics and technology of semiconductor devices. The main subjects of interest included quantum photonics (semiconductor microcavities, light emitting diodes, lasers and detectors), wide bandgap semiconductor nitrides, physics of nano and low-dimensional structures, high electron mobility transistors, crystal growth and materials technology. The research programs were carried out in close collaboration with numerous academic and industrial groups in Switzerland and abroad, in particular within the framework of programs of the European Community.
Earlier research topics pursued at Bell Laboratories and at EPFL include Molecular Beam Epitaxy and doping of GaAs and AlGaAs thin films with applications to heterostructure lasers, detectors, and Bragg mirrors, hydride vapor phase epitaxy and physical characterization of GaN on sapphire, liquid-solid phase diagrams of ternary III-V compound systems, and silicon-based non-volatile memory cells.
Prof. Ilegems is the author or co-author of over 250 scientific publications (citation index h = 48) and 7 book chapters, and has supervised over 30 doctoral students in Lausanne. His academic contacts include stays as invited professor at Stanford University (1994) and at the Polytechnic University of Madrid (2007).
Links:
Anna Fontcuberta i Morral2014 Associate Professor at the Institut des Matériaux, EPFL
2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL
2009 Habilitation in Physics, Technische Universität München
2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France)
2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells)
2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France
2001-2002 Postdoctoral Scholar at the California Institute of Technology
Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications
Sponsor: Professor Harry A. Atwater
1998-2001 PhD in Materials Science, Ecole Polytechnique
Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors
Advisor: Pere Roca i Cabarrocas
1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France .
1993-1997 BA in Physics at Universitat de Barcelona
Romuald HoudréCurriculum Vitae
CV
2011
Nommé Professeur Titulaire
2006
Nommé Maître d'Enseignement et de Recherche
2004
Rejoint le Laboratoire d'Optoélectronique Quantique LOEQ dirigé par le professeur B. Deveaud-Plédran
2001-2004
Adjoint scientifique à l'Institut de Photonique et d'Electronique Quantique IPEQ (ancien Institut de Micro et Optoélectronique), Laboratoire du professeur Ilegems.
1998
Habilitation, université Pierre et Marie Curie, Paris 6.
1997
Chercheur invité à NTT, département d'Optoélectronique, (Atsugi, Japon) de mars à août 1997
1988-2000
Collaborateur scientifique à l'Institut de Micro et Optoélectronique IMO à l'école Polytechnique Fédérale de Lausanne, groupe du professeur Ilegems. Responsable de l'épitaxie par jets moléculaires (1988-1996), responsable de l'activité microcavités optiques (1996-2000).
1987-1988
Recherches au Laboratoire de Physique de la Matière Condensée à l'école Polytechnique (France).
1986-1987
Postdoc à l'université d'Illinois à Urbana-Champaign (U.S.A.) chez le professeur H.Morkoç dans le groupe d'épitaxie par jets moléculaires.
1983-1985
Thèse de doctorat sur la photoémission de puits quantiques et superréseaux en état d'affinité électronique négative au Laboratoire de Physique de la Matière Condensée, école Polytechnique (France) sous la direction de G.Lampel et C.Hermann.
Vincenzo SavonaDe nationalité italienne, Vincenzo Savona est né en 1969. Il effectue ses études de physique à lEcole normale supérieure de Pise et à lUniversité de Pise. Puis il entreprend une thèse de doctorat à lInstitut de physique théorique de lEPFL. Il effectue des recherches post-doctorales à lEPFL, puis à lInstitut de physique de lUniversité Humboldt de Berlin. En 2002, il revient à lEPFL pour y constituer son groupe de recherche, bénéficiant dun subside «professeur boursier» du Fonds national suisse de la recherche scientifique. En 2006, il est nommé professeur assistant tenure-track à lEPFL et intègre le NCCR de photonique quantique. En 2010 il est nommé professeur associé. Actuellement, il dirige le Laboratoire de physique théorique des nanosystèmes.
