Publications associées à Guerre de tranchées

Vortex siphon - from 1:1 scale physical model to SPH simulation and prototype

The rail link between Geneva Cornavin Station, Eaux-Vives Station and Annemasse (CEVA) is currently under construction including a cut-and-cover tunnel built by slurry walls located in the alluvium of the Foron River. The covered trench cuts the groundwate ...

2019

Experimental Study at Prototype Scale of a Self-priming Free-Surface Siphon

Giovanni De Cesare, Paloma Furlan

This study is within the frame of the construction of the rail link between Geneva Cornavin station, Eaux-Vives station and Annemasse (CEVA). The project area is located at a cut-and-cover tunnel built by slurry walls located in the alluvium of the Foron R ...

Springer2018

Experimental study at prototype scale of a self-priming free surface siphon

Giovanni De Cesare, Paloma Furlan

This study is within the frame of the construction of the rail link between Geneva Cornavin station, Eaux-Vives station and Annemasse (CEVA). The project area is located at a cut-and-cover tunnel built by slurry walls located in the alluvium of the Foron R ...

2017

Physical and 3D numerical simulation of the flow in the tailrace of a hydroelectric power plant to design fishway entrances

Giovanni De Cesare, Pierre Bourqui

This study is within the frame of the construction of the rail link between Geneva Cornavin station, Eaux-Vives station and Annemasse (CEVA). The project area is located at a cut-and-cover tunnel built by slurry walls located in the alluvium of the Foron R ...

2017

High aspect ratio etching of nanopores in PECVD SiC through AAO mask

Jürgen Brugger, Songmei Wu, Vaida Auzelyte, Wei Tang

We present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 ± 7 nm. We have used three plasma chemi ...

IEEE2013

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

Mihai Adrian Ionescu, Cyrille Hibert, Daniel Grogg, Marion Hermersdorf

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...

2011

A single nanotrench in a palladium microwire for hydrogen detection

Jürgen Brugger, Luis Guillermo Villanueva Torrijo, Oscar Vazquez Mena, Thomas Kiefer

The hydrogen sensing characteristics of a single nanotrench fabricated by focused ion beam milling (FIB) in an evaporated palladium microwire are presented. In situ atomic force microscopy (AFM) measurements proved that, in the presence of H2, the trench c ...

2008