Publications associées à Résistance négative

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Mohammad Khaja Nazeeruddin, Yong Ding, Bin Ding, Cheng Liu, Jian Xu

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

Nature Portfolio2024

Contrasting Views of the Electric Double Layer in Electrochemical CO2 Reduction: Continuum Models vs Molecular Dynamics

Sophia Haussener, Evan Fair Johnson

In the field of electrochemical CO2 reduction, both continuum models and molecular dynamics (MD) models have been used to understand the electric double layer (EDL). MD often focuses on the region within a few nm of the electrode, while continuum models ca ...

Amer Chemical Soc2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Hongkeng Zhu, Armin Jafari, Palliyage Srilak Nirmana Perera

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

A review of the modeling approaches of the lightning M-component with special attention to their current and electric field characteristics

Farhad Rachidi-Haeri, Marcos Rubinstein, Mohammad Azadifar, Carlo Alberto Nucci, Qi Li

In this paper, we present the characteristics of current, electric fields and modeling approaches of lightning M-component mode of charge transfer. We consider both the classical M-components (occurring after return strokes) and M-component-type ICC (Initi ...

Elsevier2023

Mechanistic study on the evolution of vacancies in graphene by oxidation by scanning tunneling microscopy

Shaoxian Li

Nanostructured graphitic materials, including graphene hosting Å to nanometer-sized pores, have attracted attention for various applications such as separations, sensors, and energy storage. Graphene with Å-scale pores is a promising next-generation materi ...

EPFL2023

Terahertz waveform synthesis in integrated thin-film lithium niobate platform

Ileana-Cristina Benea-Chelmus, Jérôme Faist, Francesca Fabiana Settembrini

Bridging the "terahertz gap" relies upon synthesizing arbitrary waveforms in the terahertz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom ...

Nature Portfolio2023

Breakdown development in a nanosecond pulsed dielectric barrier discharge in humid air in plane-to-plane geometry

Ivo Furno, Xin Yang, Lorenzo Ibba

We used the ns electric field induced second harmonic (EFISH) generation diagnostic to measure the electric field evolution in a 200 ns pulse, dielectric barrier, plane-to-plane discharge in humid air, on the time scale shorter than the laser pulse duratio ...

Iop Publishing Ltd2023

Potential-induced degradation in bifacial silicon heterojunction solar modules: Insights and mitigation strategies

Christophe Ballif, Quentin Thomas Jeangros, Alessandro Francesco Aldo Virtuani, Olatz Arriaga Arruti, Luca Gnocchi

Potential-induced degradation (PID) may be a serious concern in photovoltaic (PV) modules and plants, particularly when approaching high system voltages (1500+ V). Here, we investigate PID occurring in bifacial rear-emitter silicon heterojunction (SHJ) sol ...

Wiley2023

Toward Band n78 Shear Bulk Acoustic Resonators Using Crystalline Y-Cut Lithium Niobate Films With Spurious Suppression

Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli, Victor Plessky

This work presents the study of suspended Y-cut Lithium Niobate shear bulk acoustic resonators for wide band filter applications in the frequency range of 3.5-4.5GHz. The resonators consist of a Lithium Niobate film with Aluminum top interdigitated electro ...

Institute of Electrical and Electronics Engineers2023

3D trigonal FAPbI(3)-based multilevel resistive switching nonvolatile memory for artificial neural synapse

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Yong Ding, Li Tao, Yao Zhang, Jun Zhang, Bowen Jiang

Hybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. However, the variable ...

WILEY2023

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Diffusion-Bonding Between Strands and Modeling of Splices of Nb3Sn Rutherford Cables

Pierluigi Bruzzone, Kamil Sedlák, Nikolay Bykovskiy

Particle accelerators foresee the use of Nb3Sn in the next generation of dipole magnets. A common design strategy is to grade the coil, i.e., to optimize the quantity of superconductor in the turns with respect to the magnetic field intensity. As a consequ ...

IEEE Institute of Electrical and Electronics Engineers2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Anisotropic and nonlinear transport in microstructured 3D topological semimetals

Xiangwei Huang

Topological semimetals are frequently discussed as materials platforms for future electronics that exploit the remarkable properties of their quasiparticles. These ideas are mostly based on dispersion relations that mimic relativistic particles, such as We ...

EPFL2022