Publications associées à Silicon controlled rectifier

Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...

2023

Miniaturised, Wireless and Distributed Neural Interface Toward Cortical Visual Prosthesis

Gian Luca Barbruni

Over the last decades, implantable neural interfaces have been extensively explored and effectively deployed to address neurological and mental health disorders. The existing solutions present several limitations. Firstly, the physical size of the implanta ...

EPFL2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test

Yi Zhang, Rui Wu

The latest standard "New Dual" power module has been developed for both silicon and silicon-carbide devices to meet the increasing demands in high reliability and high temperature power electronic applications. Due to the new package is just starting to re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz, Reza Soleiman Zadeh Ardebili

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Deexcitation Characterization for Power Supply Protection in DC Shipboard Power Systems

Drazen Dujic, Seongil Kim

The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...

IEEE2020

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Enea Figini, Armin Jafari, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya, Michaël Heijnemans

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Jessy Anthony Ançay

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Elison de Nazareth Matioli, Armin Jafari, Remco Franciscus Peter van Erp, Enea Figini, Palliyage Srilak Nirmana Perera, Furkan Karakaya, Michaël Heijnemans

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

IEEE2020

Slip Ring Test Assembly With Increased Breakdown Voltage Limit for High-Voltage Bus Satellites

Ivo Furno, Alan Howling, Fabio Avino

In this article, a setup including a passive gas breakdown mitigation technique for satellite slip ring assemblies (SRAs) is introduced and tested. The setup features a central conducting ring, separated from two external conducting limiting discs (LDs) by ...

2020

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu, Reza Soleiman Zadeh Ardebili

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

IGCT Low-Current Switching – TCAD and Experimental Characterization

Drazen Dujic, Dragan Stamenkovic

Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequ ...

2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Viability limits of the renewable source in an electricity mix: The MIXOPTIM analysis methodology

Axel Guy Marie Laureau, Elsa Merle

In this article, we use a spectral and statistical analysis of load fluctuations to calculate plausible conditions that an electricity mix of power sources must satisfy to fulfill a variable power demand on a territory. These criteria can be applied to ele ...

SPRINGER HEIDELBERG2019

MVDC Supply Technologies for Marine Electrical Distribution Systems

Drazen Dujic, Francisco Daniel Freijedo Fernández, Uzair Javaid, Wim Van der Merwe

The increase in the popularity of the medium voltage dc (MVDC) electrical distribution, as a possible evolution of the medium voltage ac (MVAC) electrical distribution for the ship on-board power systems, arises a need for a comparative evaluation and demo ...

2018

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

Institute of Electrical and Electronics Engineers2018

An electromagnetic actuator

Herbert Shea, Juan José Zarate

The present invention concerns an electromagnetic actuator (2) for a haptic display (1). The actuator (2) comprises: a) a first, movable permanent magnetic element (5), the first magnetic element (5) comprising a first latching layer facing side, a second ...

2018

Optocoupling in CMOS

Edoardo Charbon, Shourya Dutta Gupta, Myung Jae Lee

For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal qua ...

IEEE2018