Contact ohmique

Science de la nature
Physique
Physique de la matière cond...
Physique du solide

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Deep-UV approaches and printing of indium zinc oxide thin-film transistors targeting their processing on thermosensitive substrates

Alessio Mancinelli

Novel metal-oxides (MOx) semiconductors for thin-film transistors (TFTs) are being developed as they can offer superior electric performances over organic-based counterparts. MOx TFTs processed on foil could be exploited in smart labels as RFID and NFC tag ...

EPFL2021

Long‐Lived Photocharges in Supramoelcular Polymers of Low‐Bandgap Chromophores

Andrzej Sienkiewicz, Holger Frauenrath, Daniel Görl, Regina Judith Hafner

Photoinduced charge separation in supramolecular aggregates of π‐conjugated molecules is a fundamental photophysical process, and a key criterion for the development of advanced organic electronics materials. Here, we report on the self‐assembly of novel l ...

2020

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Illumination-Dependent Requirements for Heterojunctions and Carrier-Selective Contacts on Silicon

Mathieu Gérard Boccard, Jakub Holovsky, Luca Massimiliano Antognini

High efficiency silicon solar cells generally feature heterojunction or carrier-selective contact architectures, for which there is current interest in developing structures using a wide range of materials. The electrical and optical requirements that thes ...

2020

Megawatt power generation of the dual-frequency gyrotron for TCV at 84 and 126 GHz, in long pulses

Timothy Goodman, Stefano Alberti, Minh Quang Tran, Jean-Philippe Hogge, Damien Fasel, Matthieu Toussaint, Ugo Siravo, Jérémy Genoud, Jérémie Dubray, Jonathan Sylvain Masur, Christian Moura, Blaise Marlétaz, Ioannis Pagonakis, Konstantinos Avramidis

In the frame of the TCV Tokamak upgrade, two 84/126 GHz/2 s dual frequency gyrotrons designed by SPC and KIT and manufactured by THALES will be added to the existing EC-System. The first unit has been delivered to EPFL-SPC and tested. In the commissioning ...

2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Jun Ma, Luca Nela, Georgios Kampitsis

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

2020

Output-Capacitance Hysteresis Losses of Field-Effect Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Luca Nela, Georgios Kampitsis

Resonant-type power converters are supposed to generate zero switching losses during soft-switching operation. In recent research, unexpected switching losses were reported in these converters, which were attributed to a large-signal hysteresis observed in ...

IEEE2020

On the Mechanistic Understanding of Photovoltage Loss in Iron Pyrite Solar Cells

Ulf Anders Hagfeldt

Considering the natural abundance, the optoelectronic properties, and the electricity production cost, iron pyrite (FeS2) has a strong appeal as a solar cell material. The maximum conversion efficiency of FeS2 solar cells demonstrated to date, however, is ...

Wiley2020

Page 2 sur 2