Publications associées à Diode PIN

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Philip Johannes Walter Moll, Chunyu Guo, Hao Yang

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically co ...

Nature Portfolio2024

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

High sensitivity single-photon avalanche diode array

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...

2021

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Edoardo Charbon

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material ...

2020

Modeling for Ultra Low Noise CMOS Image Sensors

Raffaele Capoccia

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

An Ultra Low-Noise Micropower PPG Sensor

Antonino Caizzone

Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...

EPFL2020

AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned Photodiode

Christian Enz, Assim Boukhayma, Antonino Caizzone

Photoplethysmography (PPG) enables non-invasive vitals monitoring. Nevertheless, it is intrinsically limited by the extremely small AC/DC ratio, also called perfusion-index (PI). This increases the dynamic-range requirements to reliably process the PPG wav ...

Institute of Electrical and Electronics Engineers2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

Health monitoring device

Christian Enz, Assim Boukhayma, Antonino Caizzone

The invention relates to a photoplethysmography (PPG) sensing device comprising - a pulsed light source, - at least one pixel to create photo-generated electrons, synchronized with said pulsed light source. It is mainly characterized in that each pixel com ...

2019

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Klaus Kern, Marko Burghard

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe2) heterostructure. This ...

2019

Development of a monolithic near-field optomechanical system

Ryan Daniel Schilling

In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...

EPFL2018

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Remotely-Powered Front-End at 2.45 GHz for Real-Time Continuous Temperature Sensing

Catherine Dehollain, Onur Kazanç, Franco Maloberti

Remote powering and power management of a passive sensor system employing antenna-rectifier co-design is presented. The operating frequency of the system is chosen at 2.45 GHz in order to reduce the antenna size. A co-design approach enables the coupling o ...

IEEE2018

Photodiode Response in a CH3NH3PbI3/CH3NH3SnI3 Heterojunction

László Forró, Endre Horvath, Bálint Náfrádi, Andrea Pisoni, Massimo Spina, Karoly Holczer

Here we report another surprising feature of the methylammonium metal halide material family, the phototunability of the diode response of a heterojunction made of CH3NH3PbI3 and its close relative, CH3NH3SnI3. In the dark state the device behaves as a dio ...

2017

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Metal Halide Perovskites as Mixed Electronic-Ionic Conductors: Challenges and Opportunities-From Hysteresis to Memristivity

Wolfgang Richard Tress

Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hys ...

Amer Chemical Soc2017