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Publications associées (32)

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

Memristive Biosensors based on Full-size Antibodies and Antibody Fragments

Giovanni De Micheli, Ioulia Tzouvadaki, Sandro Carrara, Sébastien Naus

For the first time memristive biosensors developed by the incorporation of scAbs (single-chain antibody fragments) enabling label-free detection of free Prostate Specific Antigen (fPSA) for early-stage detection of prostate cancer (PC) are reported. In add ...

2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela, Catherine Erine

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018

Development and Characterisation of Silicon Photomultiplier Multichannel Arrays for the Readout of a Large Scale Scintillating Fibre Tracker

Axel Kuonen

The current LHCb detector will continue collecting data until the long shutdown 2 (2019/2020). It will be upgraded in order to operate at higher luminosity. To achieve this, two major changes are required. First the Level-0 hardware trigger limited to 1,M ...

EPFL2018

Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

Herbert Shea, Samuel Rosset, Samuel Schlatter, David James McCoul

Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety ...

Institute of Physics2017

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

Institute of Electrical and Electronics Engineers2017

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

Edoardo Charbon, Myung Jae Lee, Qi Guo

We investigate the radiation effects on single-photon avalanche diodes (SPADs) fabricated in CMOS technology. For this investigation, a high-performance SPAD based on a vertical p-i-n construction with buried-N layer is proposed and used for the characteri ...

2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

Institute of Electrical and Electronics Engineers2017

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