Floating-gate MOSFET

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Publications associées (29)

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

Andras Kis, Simone Bertolazzi, Wei Cao

Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node. In this paper, for the first time, a comprehen ...

Ieee-Inst Electrical Electronics Engineers Inc2014

A High-Performance Low-Power Near-Vt RRAM-based FPGA

Giovanni De Micheli, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon

The routing architecture, heavily using programmable switches, dominates the area, delay and power of Field Programmable Gate Arrays (FPGAs). Resistive Random Access Memories (RRAMs) enable high-performance routing architectures through the r ...

2014

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

Klaus Kern, Hagen Klauk, Frederik Sebastian Ante

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin alumin ...

Amer Chemical Soc2014

Frequency jumps in single chip microwave LC oscillators

Giovanni Boero, Marco Grisi, Gabriele Gualco

We report on the experimental observation of oscillation frequency jumps in microwave LC oscillators fabricated using standard complementary metal-oxide-semiconductor technologies. The LC oscillators, operating at a frequency of about 20 GHz, consist of a ...

American Institute of Physics2014

On performance scaling and speed of junctionless transistors

Jean-Michel Sallese, Adil Koukab

A prospective study of the junctionless transistors (JLTs) scaling performances based both on TCAD and analytical evaluations of the intrinsic delay after considering on/off voltage constraints is proposed. The tradeoffs between speed and switching power p ...

Pergamon-Elsevier Science Ltd2013

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write

Giovanni De Micheli, Andreas Peter Burg, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories and pipeline registers, which typically cannot be power-gated during sleep periods as they need to retain data and prog ...

2013

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Giovanni De Micheli, Davide Sacchetto, Michail Zervas, Yusuf Leblebici, Yüksel Temiz

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching ...

Institute of Electrical and Electronics Engineers2012

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