Publications de Matthias Bucher

Few-femtosecond resolved imaging of laser-driven nanoplasma expansion

The free expansion of a planar plasma surface is a fundamental non-equilibrium process relevant for various fields but as-yet experimentally still difficult to capture. The significance of the associated spatiotemporal plasma motion ranges from astrophysic ...

IOP Publishing Ltd2022

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Characterizing crystalline defects in single Xe nanoparticles from angular correlations of single-shot diffracted X-rays

Matthias Bucher, Christoph Bostedt, Yiming Li

We performed a wide-angle X-ray scattering experiment of single Xe nanoparticles using an X-ray free electron laser. We developed a novel analysis method that focuses on the angular correlation between plural Bragg spots in single-shot diffraction patterns ...

IOP PUBLISHING LTD2020

CJM: A Compact Model for Double-Gate Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

2019

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Matthias Bucher, Christian Enz, François Krummenacher, Christophe Lallement, Jean-Michel Sallese, Eric Vittoz, Wladyslaw Grabinski

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

2018

Variability of Low Frequency Noise and mismatch in CORNER DOPED and standard CMOS technology

Matthias Bucher, Christian Enz, Maher Kayal, François Krummenacher, Farzan Jazaeri, Mathieu Yves Hervé Coustans

IEEE2017

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Matthias Bucher, Mathieu Yves Hervé Coustans

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...

IEEE2017

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral ...

Ieee-Inst Electrical Electronics Engineers Inc2013

RF Compact Modeling of High-voltage MOSFETs

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

Medknow Publications2012

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

Analytical MOS transistor modelling for analog circuit simulation

Matthias Bucher

EPFL2000