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Jean-François Carlin

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Publications associées (189)

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Jean-François Carlin, Nicolas Grandjean, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Joachim Armand Simonne Ciers, Davide Maria Di Paola

Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...

Nature Research2021

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Jean-François Carlin, Nicolas Grandjean, Wei Liu, Yao Chen

An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...

AIP Publishing2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

IOP PUBLISHING LTD2021

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Jean-François Carlin, Nicolas Grandjean, Elison de Nazareth Matioli, Pirouz Sohi

In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickn ...

IOP PUBLISHING LTD2021

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

IOP PUBLISHING LTD2021

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Momchil Minkov, Jun Wang, Marco Clementi

Second-harmonic generation in nonlinear materials can be greatly enhanced by realizing doubly resonant cavities with high quality factors. However, fulfilling such doubly resonant condition in photonic crystal (PhC) slab cavities is a long-standing challen ...

2020

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...

ELSEVIER SCIENCE SA2020

Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Jun Wang

Making use of bound states in the continuum, we present experimental results on efficient second harmonic generation in photonic crystal cavities supporting doubly-resonant modes. The second harmonic emission is a vortex beam with radial polarization and e ...

IEEE2020

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Joachim Armand Simonne Ciers, Gordon Jens Callsen

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Yi Wang

We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of the elec ...

AMER PHYSICAL SOC2020

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...

IOP PUBLISHING LTD2020

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

AMER INST PHYSICS2019

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Pirouz Sohi, Yao Chen

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller, Rolf Erni

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in devices whos ...

2019

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