Publications de Vincent Pott | EPFL Graph Search

The high-mobility bended n-channel silicon nanowire transistor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Vincent Pott

Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...

EPFL2007

Low temperature single electron characteristics in gate-all-around MOSFET

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

2006

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Didier Bouvet, Romuald Houdré, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Christoph Eggimann, Nicolas Le Thomas

2006

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Georges-André Racine, Nicolas Abelé, Montserrat Fernandez-Bolanos Badia

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...

Elsevier2006

Vincent Pott

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The high-mobility bended n-channel silicon nanowire transistor

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Low temperature single electron characteristics in gate-all-around MOSFET

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

Gate-all-around MOSFETs: true fabrication and characteristics

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Nanowire for Room Temperature Operated Hybrid CMOS-‘NANO’ Integrated Circuits

Comparison of RSG-MOSFET and capacitive MEMS resonator detection

New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures