Publications de Daniel Grogg | EPFL Graph Search

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Daniel Grogg, Antonios Bazigos

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

Elsevier2014

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Yu Pu, Antonios Bazigos

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

The Vibrating Body Transistor

Mihai Adrian Ionescu, Daniel Grogg

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

Mihai Adrian Ionescu, Daniel Grogg, Cyrille Hibert, Marion Hermersdorf

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...

2011

Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor

Daniel Grogg

The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...

EPFL2010

Active multi gate micro-electro-mechanical device with built-in transistor

Mihai Adrian Ionescu, Daniel Grogg

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transis ...

2010

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

Mihai Adrian Ionescu, Daniel Grogg

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

Maher Kayal, Mihai Adrian Ionescu, Daniel Grogg, Fabrizio Lo Conte

In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

9 MHz vibrating body FET tuning fork oscillator

Maher Kayal, Mihai Adrian Ionescu, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Focussed ion beam based fabrication of micro-electro-mechanical resonators

Mihai Adrian Ionescu, Daniel Grogg, Nicoleta-Diana Ciressan

A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluat ...

Springer-Verlag2008

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan

The design, fabrication and experimental investigation of 22-25 MHz fragmented-membrane MEM bulk lateral resonators (BLR) with 100 nm air-gaps on thin (1 and 6 [mu]m) silicon-on-insulator (SOI) are reported. Quality factors as high as 120,000 and motional ...

2008

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

Maher Kayal, Mihai Adrian Ionescu, Cédric Meinen, Daniel Grogg, Hüseyin Cumhur Tekin, Dimitrios Tsamados

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconducto ...

2008

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Multi-gate vibrating-body field effect transistor (VB-FETs)

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Dimitrios Tsamados

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully dem ...

2008

Nano-gap high quality factor thin film SOI MEM resonators

Mihai Adrian Ionescu, Daniel Grogg, Marco Mazza, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin, Dimitrios Tsamados

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

2008

Nanostencil-based lithography for silicon nanowires fabrication

Vincent Pott, Christian Santschi, Mihai Adrian Ionescu, Daniel Grogg, Jürgen Brugger

2005

Silicon nanowires patterning by sidewall and nano-oxidation processing

Vincent Pott, Mihai Adrian Ionescu, Daniel Grogg, Jürgen Brugger

2005