Publications de Anna Fontcuberta i Morral

Thermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance

A thermal diode, which, by analogy to its electrical counterpart, rectifies heat current, is the building block for thermal circuits. To realize a thermal diode, we demonstrate thermal rectification in a GaAs telescopic nanowire system using the thermal br ...

2025

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Santhanu Panikar Ramanandan, Victor Carle Adrien Boureau

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

WILEY-V C H VERLAG GMBH2025

Modeling nanoscale junctions for device architectures

Anna Fontcuberta i Morral, Raphaël François Lemerle

FUNDACIO DE LA COMUNITAT VALENCIANA SCITO2024

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

IEEE Computer Society2024

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Anna Fontcuberta i Morral, Mitali Banerjee, Mirjana Dimitrievska

Tungsten diselenide (WSe2) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation an ...

Royal Society of Chemistry (RSC)2024

Towards Quantitative Terahertz Characterisation of Zinc Phosphide Thin Films for Photovoltaic Applications

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Léa Buswell, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

The earth-abundant and non-toxic material Zinc phosphide (Zn3P2) is a promising candidate for solar cell applications. However, growth of defect-free, high-quality thin films on substrates that can integrate with current technology (e.g. silicon) remains c ...

IEEE Computer Society2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Alok Rudra, Anna Fontcuberta i Morral, Michele Zendrini, Valerio Piazza

This dataset corresponds to the following manuscript: Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engi ...

Zenodo2024

Control of Ge island coalescence for the formation of nanowires on silicon

Alok Rudra, Anna Fontcuberta i Morral, Santhanu Panikar Ramanandan

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

2024

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Victor Carle Adrien Boureau, Valerio Piazza

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Nature Research2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Alok Rudra, Anna Fontcuberta i Morral, Michele Zendrini, Didem Dede, Valerio Piazza

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

American Chemical Society (ACS)2024

Light and Carrier Management in Emerging Zn3P2 - based solar cells: A Numerical Simulation Approach

Anna Fontcuberta i Morral, Raphaël François Lemerle

FUNDACIO DE LA COMUNITAT VALENCIANA SCITO2024

Defects in Ge and GeSn and their impact on optoelectronic properties

Anna Fontcuberta i Morral, Andrea Giunto

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn ha ...

AIP Publishing2024

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Alok Rudra, Anna Fontcuberta i Morral, Sara Marti Sanchez, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

Earth abundant zinc phosphide as an emerging material for next generation PV

Anna Fontcuberta i Morral

Zinc phosphide (Zn3P2) constitutes as a promising solar absorber material due to its high absorption and carrier moblity as well as due to the abundance of zinc and phosphorous in the earth crust. Since the first published studies few decades ago, the effi ...

FUNDACIO DE LA COMUNITAT VALENCIANA SCITO2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Valerio Piazza

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Anna Fontcuberta i Morral, Franz-Josef Haug, Mahdi Zamani, Simon Robert Escobar Steinvall, Julien Hurni, Rajrupa Paul, Valerio Piazza, Mirjana Dimitrievska, Joel René Sapera

Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

ELSEVIER2023

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Heera Menon

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known ...

ROYAL SOC CHEMISTRY2023

The 2022 applied physics by pioneering women: a roadmap

Anna Fontcuberta i Morral, Hyunjung Kim, Hui Dong

Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable envi ...

IOP Publishing Ltd2023

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Mihai Adrian Ionescu, Anna Fontcuberta i Morral, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Carlotta Gastaldi, Valerio Piazza, Mirjana Dimitrievska

Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

2023