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Gwénolé Jean Jacopin

Cette personne n’est plus à l’EPFL

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Publications associées (33)

A Novel Dopant-Free Triphenylamine Based Molecular "Butterfly" Hole-Transport Material for Highly Efficient and Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Chenyi Yi, Gwénolé Jean Jacopin, Xiong Li, Jingshan Luo, Fei Zhang, Shilong Wang

Wiley-V C H Verlag Gmbh2016

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Jean-François Carlin, Benoît Marie Joseph Deveaud, Nicolas Grandjean, Gwénolé Jean Jacopin, Wei Liu

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

Amer Inst Physics2016

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Benoît Marie Joseph Deveaud, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Amer Physical Soc2016

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Gwénolé Jean Jacopin

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodolum ...

Amer Physical Soc2016

Triazatruxene-Based Hole Transporting Materials for Highly Efficient Perovskite Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Peng Gao, Kasparas Rakstys, Gwénolé Jean Jacopin, Mohammad Ibrahim Dar, Antonio Abate

Four center symmetrical star-shaped hole transporting materials (HTMs) comprising planar triazatruxene core and electron-rich methoxy-engineered side arms have been synthesized and successfully employed in (FAPbI(3))(0.85)(MAPbBr(3))(0.15) perovskite solar ...

Amer Chemical Soc2015

Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment

Hua Zhang, Gwénolé Jean Jacopin

Core/shell InGaN/GaN nanowire light emitting diodes (LEDs) based on vertically standing single nanowires and nanowire arrays were fabricated and extensively characterized. The emission of single wire LEDs with the same conformal contact geometry as the arr ...

Institute of Physics2015

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Hua Zhang, Gwénolé Jean Jacopin

We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully ...

Royal Soc Chemistry2015

Exciton hopping probed by picosecond time-resolved cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin

The exciton transport is studied in high quality ZnO microwires using time resolved cathodoluminescence. Owing to the available picosecond temporal and nanometer spatial resolution, a direct estimation of the exciton average speed has been measured. When r ...

American Institute of Physics2015

Biexcitonic molecules survive excitons at the Mott transition

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mehran Shahmohammadi, Georg Rossbach, Gwénolé Jean Jacopin

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Gwénolé Jean Jacopin

We report on the mixed photovoltaic/photoconductive operation mode of a visible blind photodetector based on GaN nanowires containing a p-i-n junction. The photodetector operates as a photovoltaic device close to zero bias and exhibits a photoconductive ga ...

Amer Inst Physics2014

Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin, Ji Feng

Optimizing the electronic structures and carrier dynamics in semiconductors at atomic scale is an essential issue for innovative device applications. Besides the traditional chemical doping and the use of homo/heterostructures, elastic strain has been prop ...

American Chemical Society2014

Hopping process of bound excitons under an energy gradient

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Mehran Shahmohammadi, Gwénolé Jean Jacopin

We report on the mechanism of hopping for bound excitons under an energy gradient. By means of a Monte-Carlo simulation, we show that this mechanism explains the movement of bound excitons observed experimentally. We show that the speed of the excitons dec ...

American Institute of Physics2014

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Hua Zhang, Gwénolé Jean Jacopin

We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visibl ...

American Institute of Physics2013

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