Jun Ma

Cette personne n’est plus à l’EPFL

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Publications associées (37)

Enhanced transformation of sulfonamide antibiotics by manganese(IV) oxide in the presence of model humic constituents

Urs von Gunten, Jun Ma, Yang Song, Jin Jiang, Yang Zhou

In this study, a manganese(IV) oxide-mediator (MnO2-mediator) system for the abatement of sulfonamide antibiotics was evaluated. Two simple model humic constituents, syringaldehyde (SA) and acetosyringone (AS), could promote the transformation of sulfonami ...

PERGAMON-ELSEVIER SCIENCE LTD2019

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis

Institute of Electrical and Electronics Engineers2018

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Catherine Erine

AIP American Institute of Physics2018

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Elison de Nazareth Matioli, Jun Ma, Taifang Wang

Institute of Electrical and Electronics Engineers2018

Role of Cnot6l in maternal mRNA turnover

Radek Jankele, Jun Ma

Removal of poly(A) tail is an important mechanism controlling eukaryotic mRNA turnover. The major eukaryotic deadenylase complex CCR4-NOT contains two deadenylase components, CCR4 and CAF1, for which mammalian CCR4 is encoded by Cnot6 or Cnot6l paralogs. W ...

Rockefeller University Press2018

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Elison de Nazareth Matioli, Jun Ma

AIP American Institute of Physics2018

Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Elison de Nazareth Matioli, Jun Ma

In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...

2018

Nitrate formation during ozonation as a surrogate parameter for abatement of micropollutants and the N-nitrosodimethylamine (NDMA) formation potential

Florian Frédéric Vincent Breider, Urs von Gunten, Jun Ma, Yang Song

In this study, nitrate formation from ammonium and/or dissolved organic nitrogen (DON) was investigated as a novel surrogate parameter to evaluate the abatement of micropollutants during ozonation of synthetic waters containing natural organic matter (NOM) ...

Elsevier2017

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma, Dante Colao Zanuz

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...