Publications de Alessandro Pezzotta

XXXIV. The effect of linear redshift-space distortions in photometric galaxy clustering and its cross-correlation with cosmic shear

Slobodan Ilic, Malte Tewes, Georges Meylan, Frédéric Courbin, Fabio Finelli, Richard Massey, Maurizio Martinelli, Alessandro Pezzotta, Gianluca Castignani, Marcello Farina, Yi Wang

Context. The cosmological surveys that are planned for the current decade will provide us with unparalleled observations of the distribution of galaxies on cosmic scales, by means of which we can probe the underlying large-scale structure (LSS) of the Univ ...

Edp Sciences S A2024

A 49 mu W 6th-Order Chebyshev SSF-based Low-Pass Analog Filter for IEEE 802.11ax

Christian Enz, Daniel Mathias Bold, Alessandro Pezzotta, Salvatore Collura

In this paper a continuous-time low-pass analog filter based on the Cascoded Super Source Follower (C-SSF) architecture, implemented in a 28-nm bulk CMOS process, is presented. The target application is the transceiver analog baseband for the next-generati ...

IEEE2020

Hardware Acceleration of HDR-Image Tone Mapping on an FPGA-CPU Platform Through High-Level Synthesis

Christian Enz, Vincent Frédéric Camus, Mattia Cacciotti, Jérémy Lucien Maurice Schlachter, Alessandro Pezzotta

In this paper, the hardware acceleration of a tone-mapping algorithm for High-Dynamic-Range image processing is presented. Starting from the C++ source code, High-Level Synthesis has been performed using Xilinx SDSoC for a Xilinx Zynq SoC device. After an ...

IEEE2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Francesco Chicco, Alessandro Pezzotta

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Louis Hutin, Farzan Jazaeri, Alessandro Pezzotta

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Chunmin Zhang, Alessandro Pezzotta

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

2017

Carrier Mobility Extraction in FETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta

In this paper, we propose an accurate method to extract the free carrier mobility in FETs. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assesse ...

Institute of Electrical and Electronics Engineers2017

Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

Christian Enz, Francesco Chicco, Alessandro Pezzotta

Institute of Electrical and Electronics Engineers2017

Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

Christian Enz, Francesco Chicco, Alessandro Pezzotta

Institute of Electrical and Electronics Engineers2017

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Analysis of power consumption in LC oscillators based on the inversion coefficient

Christian Enz, Francesco Chicco, Alessandro Pezzotta

IEEE2017

Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies

Christian Enz, Francesco Chicco, Raffaele Capoccia, Alessandro Pezzotta

IEEE2017

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

2017

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

IEEE2016

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Christian Enz, Alessandro Pezzotta

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

IEEE2016