Publications de Myung Jae Lee | EPFL Graph Search

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Jiuxuan Zhao, Pouyan Keshavarzian

Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene in the presence of overwhelming ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Ekin Kizilkan, Utku Karaca

In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Extended Temperature Modeling of InGaAs/InP SPADs

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Ekin Kizilkan, Utku Karaca, Vladimir Pesic

We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match we ...

IEEE2023

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Won Yong Ha

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Ekin Kizilkan, Utku Karaca, Vladimir Pesic

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Jiuxuan Zhao, Pouyan Keshavarzian, Tommaso Milanese

We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 x 16 single-photon avalanche diodes (SPADs) and measures 0.29 x 0.32 mm(2). Each SPAD cell is passively quenched by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ming-Lo Wu

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

SPAD Microcells with 12.1 ps SPTR for SiPMs in TOF-PET Applications

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ming-Lo Wu

IEEE2021

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian

CMOS Single-Photon Avalanche Diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of te ...

2021

Architecture and Characterization of a CMOS 3D-Stacked FSI Multi-Channel Digital SiPM for Time-of-Flight PET Applications

Claudio Bruschini, Edoardo Charbon, Scott Anthony Lindner, Francesco Gramuglia, Myung Jae Lee, Andrei Ardelean, Andrada Alexandra Muntean, Esteban Venialgo Araujo, Carlo Alberto Fenoglio

IEEE2021

CMOS 3D-Stacked FSI Multi-Channel Digital SiPM for Time-of-Flight Vision Applications

Claudio Bruschini, Edoardo Charbon, Scott Anthony Lindner, Francesco Gramuglia, Myung Jae Lee, Andrei Ardelean, Andrada Alexandra Muntean, Esteban Venialgo Araujo, Carlo Alberto Fenoglio

International Image Sensors Society2021

A 256x128 3D-Stacked (45nm) SPAD FLASH LiDAR with 7-Level Coincidence Detection and Progressive Gating for 100m Range and 10klux Background Light

Edoardo Charbon, Chunmin Zhang, Preethi Padmanabhan, Myung Jae Lee, Baris Can Efe, Augusto Ronchini Ximenes

IEEE2021

CMOS 3D-Stacked FSI Multi-Channel Digital SiPM for Time-of-Flight PET Applications

Claudio Bruschini, Edoardo Charbon, Scott Anthony Lindner, Francesco Gramuglia, Myung Jae Lee, Andrei Ardelean, Andrada Alexandra Muntean, Esteban Venialgo Araujo

2020

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Preethi Padmanabhan, Myung Jae Lee, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

(8

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Optocoupling in CMOS

Edoardo Charbon, Shourya Dutta Gupta, Myung Jae Lee

For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal qua ...

IEEE2018

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Edoardo Charbon, Preethi Padmanabhan, Myung Jae Lee, Augusto Ronchini Ximenes

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P + /Deep N-well junction with a circular shape, for whi ...

2018